Abstract:A number of physical processes involving quantum dots depend critically upon the "evanescent" electron eigenstate wave function that extends outside of the material surface into the surrounding region. These processes include electron tunneling through quantum dots, as well as interactions between multiple quantum dot structures. In order to unambiguously determine these evanescent fields, appropriate boundary conditions have been developed to connect the electronic solutions interior to the semiconductor quantum dot to exterior vacuum solutions. In standard envelope function theory, the interior wave function consists of products of band edge and envelope functions, and both must be considered when matching to the external solution. While the envelope functions satisfy tractable equations, the band edge functions are generally not known. In this work, symmetry arguments in the spherically symmetric approximation are used in conjunction with the known qualitative behavior of bonding and antibonding orbitals to catalog the behavior of the band edge functions at the unit cell boundary. This physical approximation allows consolidation of the influence of the band edge functions to two simple surface parameters that are incorporated into the boundary conditions and are straightforwardly computed by using numerical first-principles quantum techniques. These new boundary conditions are employed to analyze an isolated spherically symmetric semiconductor quantum dot in vacuum within the analytical model of Sercel and Vahala [Phys. Rev. Lett. 65, 239 (1990); Phys. Rev. B 42, 3690 (1990)]. Results are obtained for quantum dots made of GaAs and InP, which are compared with ab initio calculations that have appeared in the literature.

The relation of the energy of electronic state with the interior periodic potential in quantum dot given by matrix method

Polaronic Effect on the Binding Energy of an Impurity with Varying Position in Parabolic Quantum Dots

Two- and three-dimensional polarons in a symmetric quantum dot with arbitrary electron-phonon coupling strength

Rayleigh-Schrödinger perturbation theory for electron-phonon interaction in two dimensional quantum dots with asymmetric parabolic potential

Near Homogeneous Variation of Potentials in Large Systems and the Electronic Structure of Molecular Quantum Dots

Correlated Electron Transport Through Parallel Double-Quantum-dot

The Effects of Electric Field on the Electronic Structure of A Semiconductor Quantum Dot

Quantum Dot Properties in the Multiband Envelope-Function Approximation Using Boundary Conditions Based Upon First-Principles Quantum Calculations

On the Competition Between the Kondo Effect and the Exchange Interaction in a Parallel Double Quantum Dot System

Shot Noise in Electron Transport Through a Double Quantum Dot: A Master Equation Approach

Quantum Dots with Interacting Electrons: Energy Spectra and Magnetization

Interactions and Oscillations in Quantum Dots

Many-Body Effects on the Low-Lying Energy Levels of Three-Electron Quantum Dots in A Magnetic Field

Exact Spectra and Spin Oscillations for Two Electrons in Quantum Dots

On the electron distribution function in quantum dots: a rigorous result

Energy for Two-electron Quantum Dots: the Quantization Rule Approach

Energy level of an electron in a saddle-potential quantum dot under a uniform magnetic field obtained by the invariant eigenoperator method

Thermoelectric Properties of a T-Shaped Quantum Dot with Relatively Strong On-Site Coulomb Interaction

Exploring Entanglement Spectrum and Phase Diagram in multi-electron Quantum Dot Chains

Transport through a strongly coupling quantum dot: Consideration of the off-diagonal self-energy

Electromagnetic-Field-Induced Resonant Structures for an Open Rectangular Quantum Dot