Abstract:Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, and sensors. Magnetoresistance in nonmagnetic semiconductors has recently raised much attention and shows great potential due to its large magnitude that is comparable or even larger than magnetic materials. However, most of the previous work focus on two terminal devices with large dimensions, typically of micrometer scales, which severely limit their performance potential and more importantly, scalability in commercial applications. Here, we investigate magnetoresistance in the impact ionization region in InGaAs nanowires with 20 nm diameter and 40 nm gate length. The deeply scaled dimensions of these nanowires enable high sensibility with less power consumption. Moreover, in these three terminal devices, the magnitude of magnetoresistance can be tuned by the transverse electric field controlled by gate voltage. Large magnetoresistance between 100% at room temperature and 2000% at 4.3 K can be achieved at 2.5 T. These nanoscale devices with large magnetoresistance offer excellent opportunity for future high-density large-scale magneto-electric devices using top-down fabrication approaches, which are compatible with commercial silicon platform.

Optimization Of An Extraordinary Magnetoresistance Sensor In The Semiconductor-Metal Hybrid Structure

Geometry and Material Optimization of the Extraordinary Magnetoresistance in the Semiconductor–metal Hybrid Structure

Planar Structure Optimization of Extraordinary Magnetoresistance in Semiconductor–Metal Hybrids

Enhanced Extraordinary Magnetoresistance in the Semiconductor-Metal Hybrid Structure with Three Current Leads

Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review

Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor

Simulation Optimization Of Performance For Extraordinary Magnetoresistance Sensor In Low-Field

Influence of Semiconductor/Metal Interface Geometry in an EMR Sensor

Hall Effect Enhanced Low-Field Sensitivity In A Three-Contact Extraordinary Magnetoresistance Sensor

Improving Electrical Contact Quality and Extraordinary Magnetoresistance in High Mobility III-V Semiconductors

Geometric Factors in the Magnetoresistance of N-Doped InAs Epilayers

Strong Temperature Dependence of Extraordinary Magnetoresistance Correlated to Mobility in a Two-Contact Device

Unusual Anisotropic Magnetoresistance Due to Magnetization-Dependent Spin-Orbit Interactions

Electric Field Modulation of Magnetoresistance in Multiferroic Heterostructures for Ultralow Power Electronics

Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor

Optimization of Magnetoimpedance Effect in Co-based Ribbon by Laser Patterning for Sensor Arrays Application

Diode and Inhomogeneity Assisted Extremely Large Magnetoresistance in Silicon

Highly Sensitive Magnetic Sensor Based on Anisotropic Magnetoresistance Effect

Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2

Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

Electric Field Tuning of Anisotropic Magnetoresistance in Ni-Co/PMN-PT Multiferroic Heterostructure