Evidence of a Full Gap in LaFeAsO_1-xF_x Thin Films from Infrared Spectroscopy

Xiaoxiang Xi,Y. M. Dai,C. C. Homes,M. Kidszun,S. Haindl,G. L. Carr
DOI: https://doi.org/10.1103/physrevb.87.180509
2013-01-01
Abstract:We report conventional and time-resolved infrared spectroscopy on LaFeAsO1-xFx superconducting thin films. The far-infrared transmission can be quantitatively explained by a two-component model including a conventional s-wave superconducting term and a Drude term, suggesting at least one carrier system has a full superconducting gap. Photoinduced studies of excess quasiparticle dynamics reveal a nanosecond effective recombination time and temperature dependence that strongly support a recombination bottleneck in the presence of a full gap. The two experiments provide consistent evidence of a full, nodeless, though not necessarily isotropic, gap for at least one carrier system in LaFeAsO1-xFx.
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