Enhanced Lspr Effect of Hexagonal Boron Nitride Substrate on Mos2 Photoluminescence
Liang Dong,Yubo Li,Shuo Liu,Zhe Yang,Bing Wei,Xiaozhi Wang,Jikui Luo,Hangsheng Yang
DOI: https://doi.org/10.2139/ssrn.4600167
2023-01-01
Abstract:In large-scale applications, the continuous increase in power density and consumption of electronic devices has made thermal management a significant bottleneck in device development. This study investigates the photoluminescence (PL) properties of monolayer MoS2 on hexagonal boron nitride (h-BN) substrate enhanced by plasma resonance induced by metal nanoparticles. The PL spectra of MoS2 are measured under different power conditions before and after plasma enhancement and compared with those on conventional Si/SiO2 substrates. Our findings suggest that the h-BN substrate, due to its higher thermal conductivity and electron-phonon coupling properties, leads to an increased PL intensity, reduced red-shift, and an elevated thermal management threshold in the monolayer MoS2 deposited on it. Following the drop-casting of metal nanoparticles, the h-BN substrate's exceptional heat dissipation characteristics exhibit pronounced advantages in PL intensity, enhancement multiplicity, and red-shift degree, particularly under high-power light injection conditions. This study offers crucial theoretical and experimental insights that support using h-BN substrates in monolayer MoS2 optoelectronic devices, particularly for optimizing PL performance in high-power situations. The insights gained from this study will provide a new way for electronic devices in industrialized large-scale applications and thermal management and performance enhancement of high-power optoelectronic devices.