An Activator Binding Site in the Gating Charge Pathway of KCNQ2 Channel

Ping Li,Zhuxi Chen,Huaiyu Yang,Zhaobing Gao,Hualiang Jiang,Min Li
DOI: https://doi.org/10.1016/j.bpj.2013.11.827
IF: 3.4
2014-01-01
Biophysical Journal
Abstract:During the activation process of voltage-gated cation channels, the gating charges in the voltage-sensor domain (VSD) translocate across a focused electric field spanned by a short distance where hydrophobic residues form an occluded site in the gating pathway. In voltage-gated K+ (Kv) channels, a highly conserved phenylalanine in the middle of S2 is the core component of the occluded site. This aromatic residue separates the extracellular and intracellular hydrated crevices of the VSD and forms the charge transfer center that catalyzes movement of the gating charges. Using a comprehensive approach employing homology modeling, molecular docking, molecular dynamics (MD) simulation, mutagenesis and electrophysiology, we identifies an activator-binding pocket in the gating pathway of KCNQ2 channel at the occluded site where the electric field is highly focused. The opener-binding pocket with a volume of about 170 Å3 extends deeply inside the VSD and can accommodate various activators. These results support the idea that the gating charge pathways may be structurally diverse and can serve as direct drug targets.
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