Dopant Occupancy and Increased Exposure Energy of Zr:Yb:Ho:Linbo3 Crystals

Li Dai,Shanshan Jiao,Chao Xu,Dayong Li,Jiaqi Lin,Chuntian Chen
DOI: https://doi.org/10.1016/j.materresbull.2014.02.008
IF: 5.6
2014-01-01
Materials Research Bulletin
Abstract:Yb:Ho:LiNbO3 crystals tridoped with various Zr4+ concentrations (0, 1, 2 and 5 mol%) were grown by Czochraski technique. Defect structure and dopant occupancy of Zr:Yb:Ho:LiNbO3 crystals were determined by IR transmission spectrum. The effective distribution coefficient of Zr ion increases with increasing ZrO2 concentration in the melts, which is near to one. The light-induced scattering of Zr:Yb:Ho: LiNbO3 crystals was quantitatively measured via the incident exposure energy. The exposure energy of Zr (5 mol%):Yb:Ho:LiNbO3 crystal is 49.33 J/cm(2), which is two orders higher than that of Yb:Ho:LiNbO3 crystal in magnitude. The photoconductivity is key factor to understand the internal relationship between the dopant occupancy and exposure energy of the crystals. (C) 2014 Published by Elsevier Ltd.
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