Abstract:Over the past few years, wide and direct band gap semiconductors have been intensively studied for their application as blue and ultraviolet light emitters. As a wide gap semiconductor, ZnO has a wide band gap (3.37 eV) and a large binding energy (60 meV). Therefore, ZnO is considered as one of the most promising candidates for short wavelength optoelectronics devices, and it is very important to conduct further studies of the properties of ZnO thin films.In this paper, indium-doped zinc oxides was prepared by radio frequency (rf) reactive co-sputtering on silicon (100) substrate at 430 ℃. Sputtering target were consist of metal zinc (99.99%) and metal indium (99%). Indium content is about 3% (the ratio of indium slices area to that of whole target) on the target. The sputtering gas is a mixture gas of argon (99.97%) and oxygen (99.95%), the partial pressure ratio of oxygen is 0.4. The structure, surfaces morphology, type of conductivity, electrical resistivity and PL spectra of the sample were characterized by X-ray diffractometer, scanning electron microscopy, hot probe, four-point probe and fluorescent spectrophotometer, respectively. There are four main ZnO diffraction peaks in the glancing angle X-ray diffraction patterns, and no diffraction peaks of In_2O_3 or Zn_2In_2O_5 are observed. Therefore, we think that polycrystalline ZnO thin films was prepared by RF reactive co-sputtering . The θ-2θ scan mode X-ray diffraction patterns indicated that the film has highly c-axis orientation and low biaxial compressive stress (0.74 GPa). The 2θ angles of (002) diffraction peak is 34.48° and the full width at half maximum is 0.376°. The surface of the sample was smooth and flat. Compared with un-doped ZnO thin films, low resistivity (1.6 Ω·cm) n-type ZnO thin film was deposited on silicon (100) by doped indium. The blue-violet photoluminescence bi-peak located at 415 nm and at 433 nm is observed when exited with 340 nm wavelength in the photoluminescence (PL) spectrum at room temperature. In this paper, we think that the peak at 415 nm comes from In impurity defects and the peak at 433 nm originates from Zn interstitial defects.

Investigation of Third Order Nonlinear Optical Properties of Undoped and Indium Doped Zinc Oxide (inzno) Thin Films by Nanosecond Z-Scan Technique

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Photoluminescence and Enhanced Third Order Nonlinear Optical Properties of InZnO Thin Films

Study of the Nonlinear Optical Absorption and Refraction of Indium Doped Zinc Oxide (izo) Thin Films Using Z-Scan Technique

Conductivity and Optical Nonlinearity of Sb Doped Sno2 Films

Structural, Electrical, and Optical Properties of ZnInO Alloy Thin Films

Third-order Optical Nonlinearities of Zn_(1-x)MgxO Thin Films

Third-harmonic optical process in Zn:NiO thin films under the influence of femtosecond and continuous wave laser excitation

Properties and Structure Characterization of Indium-doped ZnO Thin Films

Ultrafast Third- Order Optical Nonlinearity of ZnO Crystals with Different Crystal Planes and Doping

Refractive Indeces and Third-order Susceptibilities of MgxZn1-xO Thin Films

Optical Nonlinearities of InN by Reflection Z-scan Technique

Preparation and Study of Properties of Indium-Doped ZnO Films on Si Substrates

Study of Undoped and Indium Doped ZnO Thin Films Deposited by Sol Gel Method

Preparation of In-doped ZnO Films on Si Substrates Using Radio Frequency (rf) Reactive Co-sputtering Technique

Investigation of local and nonlocal nonlinear optical refraction effect in IZO thin films

Nonlinear Optical Properties of SnO 2 Nanoparticles Studied by Z Scan Technique

Enhanced Optical Third-Harmonic Generation in Phase-Engineered Nanostructured Zn1-xCdxS Thin Films for Optoelectronic Device Applications

Ultrafast Carrier Dynamics and Third Order Nonlinear Optical Properties of Aluminum Doped Zinc Oxide (AZO) Thin Films

Determination of the Third- and Fifth-Order Nonlinear Refractive Indices in Inn Thin Films

A Z-Scan Study of LiNbO3 Thin Films