New pentlandite-like oxide semiconductors IrIn6XYO8 (X = Ga, In; Y = Ge, Sn, Ti) as potential candidates for photocatalytic water splitting under visible-light irradiation
Xiaohui Yang,Dan Liu,Shi-Yu Lu,Siyu Xiang,Han Zhang,Qian Yang,jiang Yong Di,Yilong Ma,Rong Wang,Shiyu Lu,Yongjiang Di
DOI: https://doi.org/10.1039/d3tc03118g
IF: 6.4
2023-11-30
Journal of Materials Chemistry C
Abstract:Narrow-band gap metal oxide semiconductors, such as those based on Pb 2+ , Bi 3+ , and Sn 2+ ions, have achieved significant success in the field of photocatalysis due to their effective utilization of visible light. The key is the presence of antibonding states derived from the lone-pair ns orbitals at the valence band maximum. In contrast, the feature of a narrow band gap in In-based metal oxides with the empty 5s orbital of the In 3+ cation is actually rather uncommon. In this study, we present a mechanistic investigation of IrIn 6 XYO 8 (X = Ga, In; Y = Ge, Sn, Ti), a class of narrow-band gap semiconductors, using first-principles calculations. Based on bond theory analysis, we determine the band edge electronic feature by elucidating the role of orbital interactions within In–O/In bonds. Leveraging the advantages of their narrow band gap and efficient carrier separation capability, IrIn 6 XYO 8 (X = Ga, In; Y = Ge, Sn, Ti) demonstrate significant potential for photocatalytic water splitting. Moreover, by integrating band edge positions and Gibbs free energy calculations, we identify that IrIn 6 XTiO 8 (X = Ga, In) are effective catalysts for overall water splitting under visible light irradiation, while IrIn 6 GaGeO 8 presents as a highly promising photocatalyst for H 2 evolution.
materials science, multidisciplinary,physics, applied