Abstract:The purpose of this work is to look for a practical structure for application of quantum dots (QD) in solar cells in order to enhance sub-band gap photon absorption. We focuse on a stack of strain-compensated GaSb/GaAs type-II QDs. We propose a novel structure with GaSb/GaAs type-II QD absorber embedded in the p-doped region of ideal solar cell, but spatially separated from the depletion region. We developed the model and used the detailed balance principle along with Poisson and continuity equations for calculating of the energy band bending along with the photocurrent and the dark current, and the conversion efficiency of the cell. Our model takes into account both single-photon and double-photon absorption as well as non-radiative processes in QDs and predicts that oncentration from 1-sun to 500-sun raises the efficiency from 30% to 50%. We showed that accumulation of charge in the QD absorber is the clue to understanding of potentially superior performance of the proposed solar cell. An attractive feature of the proposed solar cell is that QDs do not reduce the open circuit voltage but facilitate generation of the additional photocurrent to the extent that photovoltaic characteristics reduce to that of ideal IB solar cell while the efficiency meets the Luque-Marti limit. It should be noted that, although non-radiative processes like relaxation in QDs and recombination through QDs degrade photovoltaic characteristics of the proposed solar cell, its conversion efficiency is still predicted to be above the Shockley-Queisser limit by 5% to 10%. This study is an important step toward producing practical solar cells that benefit from additional photocurrent generated by sub-band gap photons.

Voltage Dependence of Two-Step Photocurrent Generation in Quantum Dot Intermediate Band Solar Cells

Bias Voltage Dependence of Two-Step Photocurrent in Gaas/Algaas Quantum Well Solar Cells

Si Solid-State Quantum Dot-Based Materials for Tandem Solar Cells.

Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Voltage Recovery in Charged InAs/GaAs Quantum Dot Solar Cells

Impacts of Ambipolar Carrier Escape on Current-Voltage Characteristics in a Type-I Quantum-Well Solar Cell

Minimized Open-Circuit Voltage Reduction in GaAs/InGaAs Quantum Well Solar Cells with Bandgap-Engineered Graded Quantum Well Depths

Influence of Temperature and Reverse Bias on Photocurrent Spectrum and Supra-Bandgap Spectral Response of Monolithic GaInP/GaAs Double-Junction Solar Cell

Gaas/Algaas Quantum Wells with Indirect-Gap Algaas Barriers for Solar Cell Applications

Influence of built-in charge on photogeneration and recombination processes in InAs/GaAs quantum dot solar cells

Wide-Bandgap InAs/InGaP Quantum-Dot Intermediate Band Solar Cells

Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells

High quantum yields generated by a multi-band quantum dot photocell

Quantum Efficiency and Temperature Coefficients of Gainp/Gaas Dual-Junction Solar Cell

Strong interband transitions in InAs quantum dots solar cell

Thermodynamic Limits of Quantum Photovoltaic Cell Efficiency

Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells

InAs/GaAs Quantum Dot Solar Cells with Quantum Dots in the Base Region

Quantum entropy evolution in the photovoltaic process of a quantum dot photocell

Enhanced quantum yields and efficiency in a quantum dot photocell modeled by a multi-level system