Abstract:The resistance to thermal quenching is an essential factor in evaluating the performance of luminescent materials for application in white light emitting diodes (WLEDs). In this work, we studied the site occupancy preference and thermal quenching of luminescence in β-Ca2P2O7:Bi2+ red phosphor at low (10-300 K) and high temperatures (303-573 K). In β-Ca2P2O7, the host lattice has four different calcium sites, at which Bi2+dopant can be located. After comparing the change of bond energy when the Bi2+ ions are incorporated into the four calcium sites, we found out that Bi2+ would preferentially occupy the smaller energy variation sites Ci(2) and Ci(1) in this compound, which can be assigned to Bi(2) and Bi(1), respectively. Surprisingly, we noticed that the variation of emission intensity is different under different excitations when the temperature changes from 10 to 300 K. When exciting into the typical absorption of Bi(1) sites at 419 nm, the emission intensity at 300 K remains only 38% as compared to that at 10 K, while exciting into typical Bi(2) absorption at 460 nm, the emission intensity increases to 110%. When further increasing the temperature from 303 to 573 K, we observed a similar phenomenon, and the emission at 460 nm excitation starts to quench at 453 K. The emission intensity at 573 K still remains 86.1% of that at 303 K. This might be attributed to the Bi(2) → Bi(1) energy transfer. It is also evidenced by the time-resolved emission spectra and lifetime values. This work gives new insights into better understanding luminescent behaviors of Bi2+-doped materials with multiple cation sites. This should be helpful in the future when designing the bismuth doped phosphor for WLEDs with better resistance to thermal quenching.

ChemInform Abstract: Unusual Concentration Induced Antithermal Quenching of the Bi2+ Emission from Sr2P2O7:Bi2+.

Site Occupancy Preference and Antithermal Quenching of the Bi2+ Deep Red Emission in Β-Ca2p2o7:Bi2.

Photoluminescence Of Sr2p2o7 : Bi2+ As A Red Phosphor For Additive Light Generation

Low Temperature Spectroscopic Properties of Divalent Bismuth Doped Ba2P2O7 for White Light LEDs

Bi2+-doped strontium borates for white-light-emitting diodes.

Deep red radioluminescence from a divalent bismuth doped strontium pyrophosphate Sr2P2O7:Bi2+

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A Reinvestigation of Luminescence Properties of Bi3+-activated MSb2O6 (m=ca, Sr) Phosphors

Orange‐to‐Red Emission from Bi2+and Alkaline Earth Codoped Strontium Borate Phosphors for White Light Emitting Diodes

Bi 3+ Full Occupancy Efficient Ultra-Wideband Emission Based on Triangle Pore Structure

Effect of Bi3+ Ion Concentration on Crystal Structure and Luminescent Properties of Blue–green-Emitting Y2O3:Bi3+ Phosphors

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Abnormal Bi3+-Activated NIR Emission in Highly Symmetric XAl12O19 (X = Ba, Sr, Ca) by Selective Sites Occupation

Sr3Y(BO3)3:Bi3+ Phosphor with Excellent Thermal Stability and Color Tunability for Near-Ultraviolet White-Light LEDs

Luminescence properties of Sr2Ga2GeO7:Bi3+ phosphors and temperature sensing characteristics of co‐doped Sm3+

Site-specific reduction of Bi3+ to Bi2+ in bismuth-doped over-stoichiometric barium phosphates

Tunable Emission Color of Li2SrSiO4:Tb3+ Due to Cross-Relaxation Process and Optical Thermometry Investigation