Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires
Lia Hong,Doheon Koo,Hosan Shin,Suyeon Choi,Hongyun So,Jae Byung Park,Woosung Park,Jeeyoung Shin
DOI: https://doi.org/10.1002/admi.202400491
IF: 5.4
2024-11-11
Advanced Materials Interfaces
Abstract:This research investigates the assembly of nanowires on gold electrodes using dielectrophoretic force, with an emphasis on static electric fields. An optimal nanowire alignment is achieved at a 0.5 V DC offset. Findings suggest that high offset voltages disrupt alignment by causing nanowire rotation, highlighting the need for a balance between dielectrophoretic and electric double‐layer forces for effective nanowire alignment. Among numerous approaches to assembling nanowires onto electrodes, dielectrophoresis (DEP) is a potential candidate to place the nanowires. However, its yield is still far from perfection, urging fundamental understanding of its dynamics. Here, the impact of a static electric field on dielectrophoretic nanowire assembly on gold electrodes is investigated. Specifically, a 4 peak‐to‐peak alternating voltage with 700 Hz is applied and modulate the offset voltage from 0 to 2V. The highest yield in the alignment of the nanowires at 0.5 V offset voltage is found. With the optical investigation of misaligned nanowires, it is found that rotating wires on top of electrodes, and the analysis of their angular velocity suggest the impact of the induced static charges. The numerical analysis quantifies the length scale of competing two forces, dielectrophoretic force and electric double layer force. This work suggests a quantitative understanding of the interplay between dielectrophoresis and electric double layer, which contributes to the advances in scalable nanowire fabrications.
materials science, multidisciplinary,chemistry