Abstract:The spin Hall effect in trilayer graphene proximitized with tin sulfide (SnS), a group‐IV monochalcogenide, is observed with non‐local spin precession experiments up to room temperature. The output of the spin‐charge interconversion as well as the spin Hall angle is gate tunable and exhibits a maximum when the Fermi level is around the charge neutrality point of the graphene. Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long‐distance spin transport owing to its minimal spin‐orbit coupling, which, however, limits its capacity for effective spin manipulation. This problem can be overcome by putting spin‐orbit coupling materials in close contact with graphene leading to spin‐orbit proximity and, consequently, efficient spin‐to‐charge conversion through mechanisms such as the spin Hall effect. Here, the gate‐dependent spin Hall effect in trilayer graphene proximitized with tin sulfide (SnS) is reported and quantified, a group‐IV monochalcogenide that has recently been predicted to be a viable alternative to transition‐metal dichalcogenides for inducing strong spin‐orbit coupling in graphene. The spin Hall angle exhibits a maximum around the charge neutrality point of graphene up to room temperature. The findings expand the library of materials that induce spin‐orbit coupling in graphene to a new class, group‐IV monochalcogenides, thereby highlighting the potential of 2D materials to pave the way for the development of innovative spin‐based devices and future technological applications.

Two-dimensional Group Delay in Graphene Probed by Spin Precession Measurements

Ballistic Collective Group Delay and Its Goos–Hänchen Component in Graphene

Spin-Dependent Transport Through A Quantum Wire on A Graphene Surface

Spin-Dependent Delay Time and the Hartman Effect in Tunneling Through Diluted-Magnetic-Semiconductor/Semiconductor Heterostructures

Time-dependent Quantum Monte Carlo Simulation of Electron Devices with Two-Dimensional Dirac Materials: A Genuine Terahertz Signature for Graphene

Gate‐Tunable Spin Hall Effect in Trilayer Graphene/Group‐IV Monochalcogenide van der Waals Heterostructures

Quantum Time-Dependent Monte Carlo Simulation of Electron Devices with 2D Linear-Band Materials: a Genuine TeraHertz Signature for Graphene

Electrical Detection of Spin Precession in Single Layer Graphene Spin Valves with Transparent Contacts

Predicting quantum spin hall effect in graphene/GaSb and normal strain-controlled band structures

Observation of anomalous Hanle spin precession lineshapes resulting from interaction with localized states

Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene

Spin-Orbit Proximity Effect in Graphene

Spin transport in high-mobility graphene on WS$_2$ substrate with electric-field tunable proximity spin-orbit interaction

Observing movement of Dirac cones from single-photon dynamics

Non-inertial effects in gapped graphene

Direct coupling between charge current and spin polarization by extrinsic mechanisms in graphene

Topologically protected one-dimensional electronic states in group IV two-dimensional Dirac materials

Dirac-fermions in Graphene D-Wave Superconducting Heterojunction with the Spin Orbit Interaction

Experimental observation of the quantum Hall effect and Berry's phase in graphene

Enhancing Spin–orbit Coupling in High-Mobility Graphene by Introducing Chiral Space Curvature

Manifestation of the shape and edge effects in spin-resolved transport through graphene quantum dots