Abstract:HfO2 is one of the alternative candidate gate materials for SiO2 in electronic devices, because of its high dielectric constant (ε ≈ 25). Space charges and defects are more favorable to be accumulated at the oxide-substrate interface, which plays a key role in the electrical properties of electronic devices. However, it is still unclear that how the defects affect the electrical performance of devices. In this paper, the effect of oxygen vacancy (Vo) on the electronic structure of the HfO2/Si interface and electrical properties of devices was analyzed by using the density functional theory. The 2-layer model of HfO2/Si was built, and then the Vo was introduced into the interface through first-principles calculation method. The interfacial electronic levels, states, and localization functions of these two models were calculated with the assistance of Quantum Espresso software. It was found that the interaction between atoms such as Si-O and Hf-O at HfO2/Si interface is weaker than that in the SiO2 and HfO2, respectively. It means that the point defects are easy to be formed at the HfO2/Si interface. The interfacial state is originated from Si and Hf atoms, which is quite different from the bulk state and responsible to the electrical performance of devices. Compare with Hf, the Si near VO processes greater electron affinity and thus has more ability to capture electrons, leading to the electrostatic breakdown eventually. Our research work revealed the reason why the interfacial states were formed and the physical mechanism of the effect of interfacial states on the electrical properties of the device from the electronic level. It is expected that these results can be benefited to the structural design and performance optimization for electronic devices.

First-Principles study of HfO 2 /:GaAs interface passivation by Si and Ge

Sulfur Passivation Effect on HfO2/GaAs Interface: A First-Principles Study

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

Density-functional theory molecular dynamics simulations of a-HfO2/Ge(100)(2 × 1) and a-ZrO2/Ge(100)(2 × 1) interface passivation

Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) Interface Trap State Reduction Via In-Situ N-2/H-2 RF Downstream Plasma Passivation

Ultralow Defect Density at Sub-0.5 Nm HfO2/SiGe Interfaces Via Selective Oxygen Scavenging

Comparison Of The Interfacial And Electrical Properties Of Hfalo Films On Ge With S And Geo2 Passivation

The Interface Properties of La2o3/Gaas System by Surface Passivation

Sulfur Passivation for the Formation of Si-terminated Al 2 O 3/ SiGe(0 0 1) Interfaces

Effect of Oxygen Vacancy on the Electronic Structure and Electrical Properties of HfO2/Si Interface

Effective Interface Passivation of A Ge/Hfo2 Gate Stack Using Ozone Pre-Gate Treatment and Ozone Ambient Annealing

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Density functional theory simulations of amorphous high-κ oxides on a compound semiconductor alloy: a-Al2O3/InGaAs(100)-(4×2), a-HfO2/InGaAs(100)-(4×2), and a-ZrO2/InGaAs(100)-(4×2)

The Structural, Chemical and Electronic Properties of A Stable Gas/Gaas Interface

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Density Functional Calculations on Atomic and Electronic Structures of Amorphous Hfo2/Si(001) Interface

Impacts of Crystal Orientation of Gaas on the Interfacial Structures and Electrical Properties of Hf0.6la0.4ox Films

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties