Phonon-thermoelectric Transistors and Rectifiers

Jian-Hua Jiang,Manas Kulkarni,Dvira Segal,Yoseph Imry
DOI: https://doi.org/10.1103/physrevb.92.045309
IF: 3.7
2015-01-01
Physical Review B
Abstract:We describe nonlinear phonon-thermoelectric devices where charge current and electronic and phononic heat currents are coupled, driven by voltage and temperature biases, when phonon-assisted inelastic processes dominate the transport. Our thermoelectric transistors and rectifiers can be realized in a gate-tunable double quantum-dot system embedded in a nanowire which is realizable within current technology. The inelastic electron-phonon scattering processes are found to induce pronounced charge, heat, and cross rectification effects, as well as a thermal transistor effect that, remarkably, can appear in the present model even in the linear-response regime without relying on negative differential thermal conductance.
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