Photo Luminescence of Cooper Pairs in a Naturally Occurring Heretostructure K_0.75Fe_1.75Se_2

A. Ignatov,R. H. Yuan,N. L. Wang

2013-01-01

Abstract:Combining superconductor and semiconductors in nanostructure junctions was a challenging technological problem that attracted attention for long time [van Wees]. The radiative recombination of Cooper pairs was demonstrated, using a Nb/n-InGaAs/p-InP heterostructure [EL_Hayashi, PL_Hayashi], called Cooper pair LED [PL_Suemune, R_Suemune]. It has been suggested that the junction could produce entangled photon pairs [Benson, Gywat] needed for quantum information processing and communication. Here we demonstrate an enhanced radiative recombination of electron Copper pairs in inhomogeneous K_0.75Fe_1.75Se_2 (KFS) subjected to laser light upon cooling below superconducting transition temperature T_c 28 K. The observation of this phenomena is possible due to fulfillment of the following three conditions: (1) Phase separation in superconducting KFS crystals is realized via naturally occurring heterostructure [mic_Charnukha, TEM_Wang]; (2) Partial Fe-vacancy ordered n-type semiconducting regions, sandwiched between Fe-vacancy free SC and vacancy-ordering AFM structure, forming active layers. The electronic structure of those active layer is tuned to induce Cooper pairs by the proximity effect [de Gennes] and/or to accept Cooper pair tunneling from the SC phase. In the active layer, the electron Cooper pair can radiatively recombine with two p-type holes [Asano] produced by laser photoexcitation; (3) In KFS nature provides at least 10^9 SC/n-type semiconducting/AFM insulating junctions per cm^3. For laser excitation energy of 1.92 eV (λ=647.1 nm) and power 0.68 mW focused to the spot of 40x80 μm^2 the estimated internal quantum efficiency of the natural heterostructure at 10 K in the luminescence range of 700 to 1300 nm is close to 100 by availability of the p-type holes.