Abstract:The morphology of the end facet has a great effect on the performance of the one-dimensional semiconductor nanostructure. In terms of the lattice structure, the end facet of synthesized CdS nanostructures is usually hexagonal-shaped. Therefore, morphological tunability of the end facet for CdS is still a challenge. In this work, quasi-rectangular cross-sectional Sn-doped CdS nanowires were successfully synthesized by the chemical vapor deposition method. The crystal and morphological properties of synthesized nanowires were characterized by transmission electron microscopy and scanning electron microscopy. Because of the high crystal quality and well-cleaved surface, optically pumped whispering gallery mode lasing is realized at room temperature with a threshold of 11.3 mW/cm(2). Compared to the hexagonal-shaped Sn-doped CdS nanowires, the tunability of the output mode is achieved. Temperature-dependent photoluminescence spectra were measured, and the temperature coefficient is determined to be -0.515 meV.K-1. In addition, the activation energy was fitted to be 43.01 meV, illustrating that the main carrier decay channel exhibits exciton recombination. The quasi-rectangular cross-sectional Sn-doped CdS nanowire-based photodetectors presented a maximum current on/off ratio of 3 X 10(2). The photoresponsivity and specific detectivity were estimated to be 0.22 mA/W and of 1.14 x 10(12) Jones under the illumination of 405 nm laser with a laser density of 495 mu W/cm(2) at V-DS = 3 V. Moreover, n type doping behavior is determined by the field effect transistor device, and the field effect mobility is calculated to be 0.18 cm(2).V-1.s(-1). Our work provides a new way to tailor the properties of CdS for the application in integrated photonic and optoelectronic devices.

Optical Performance of Cadmium Sulfide/silicon Nanowire Heterostructure Arrays Prepared by SILAR Technique

Improving Performance of Si/CdS Micro-/Nanoribbon P-N Heterojunction Light Emitting Diodes by Trenched Structure

Optical and Optoelectronic Performances of Quasi-Rectangular Cross-Sectional Sn-Doped CdS Nanowires

Preparation and Optical Properties of Highly Ordered CdS Nanowire Arrays

High-performance Photodetectors and Enhanced Field-Emission of CdS Nanowire Arrays on CdSe Single-Crystalline Sheets

Individual Dual-Emitting Cds Multi-Branched Nanowire Arrays under Various Pumping Powers

Synthesis of Cds Nanowire Networks and Their Optical and Electrical Properties

Spatial bandgap engineering along single alloy nanowires.

Optical Properties of CdS Nanobelts and Nanosaws Synthesized by Thermal Evaporation Method

Growth, Optical, and Electrical Properties of Single-Crystalline Si-CdSe Biaxial p-n Heterostructure Nanowires

Silica-coated and annealed CdS nanowires with enhanced photoluminescence

A New Method to Prepare CdS Nanowire Arrays

Fabrication and optical properties of silicon nanowire/Cu2O nano-heterojunctions by electroless deposition technique

Influence of Wide Band Gap Oxide Substrates on the Photoelectrochemical Properties and Structural Disorder of Cds Nanoparticles Grown by the Successive Ionic Layer Adsorption and Reaction (silar) Method

Optical Absorption in C-Si/a-si:H Core/shell Nanowire Arrays for Photovoltaic Applications

Optical Switches Based on Cds Single Nanowire

Optical Waveguide Behavior of Se-doped and Undoped CdS One-Dimensional Nanostructures Using Near-Field Optical Microscopy

Large Scale Fabrication Of Well-Aligned Cds/P-Si Shell/Core Nanowire Arrays For Photodetectors Using Solution Methods

Light Harvesting and Enhanced Performance of Si Quantum Dot/Si Nanowire Heterojunction Solar Cells

Strategy of All-Inorganic Cs3Cu2I5/Si-Core/Shell Nanowire Heterojunction for Stable and Ultraviolet-Enhanced Broadband Photodetectors with Imaging Capability.

Band-filling of solution-synthesized CdS nanowires