Magnetic Skyrmion Transistor: Skyrmion Motion in a Voltage-Gated Nanotrack

Xichao Zhang,Yan Zhou,Motohiko Ezawa,G. P. Zhao,Weisheng Zhao
DOI: https://doi.org/10.1038/srep11369
IF: 4.6
2015-01-01
Scientific Reports
Abstract:Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions and processes have been theoretically investigated and demonstrated, in which the gate voltage can be used to switch on/off a circuit. Our results provide the first time guidelines for practical realization of hybrid skyrmionic-electronic devices.
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