Development of ultra-high sensitivity wide-band gap UV-EUV detectors at NASA Goddard Space Flight Center

shahid aslam,feng yan,d e pugel,david e franz,l miko,f a herrero,m matsumara,s v babu,c m stahle

DOI: https://doi.org/10.1117/12.639415

2005-01-01

Abstract:Rapid progress in the AlGaN (E g =3.4-6.2eV), 4H-SiC (E g =3.2eV) and ZnMgO (E g =2.8-7.9eV) material systems over the last five years has led to the demonstration of a number of opto-electronic devices. These wide energy band gap devices offer several key advantages for space applications, over conventional Si (E g =1.1eV) based devices, such as visible-blind detection, high thermal stability, better radiation hardness, high breakdown electric field, high chemical inertness and greater mechanical strength. Furthermore, the shorter cut-off wavelength of these material systems eliminates the need for bulky and expensive optical filtering components mitigating risk and allowing for simpler optical design of instrumentation. In this paper, we report on the development at NASA/Goddard of ultra-sensitive, high quantum efficiency AlGaN and 4H-SiC Schottky barrier UV-EUV photodiodes, 4H-SiC UV single photon avalanche diodes, large format 256x256 AlGaN UV p-i-n photodiode arrays and recent progress in elemental substitution for p-type and enhanced n-type doping of ZnO.