Schottky Contact of an Artificial Polymer Semiconductor Composed of Poly(dimethylsiloxane) and Multiwall Carbon Nanotubes

Yi Zhou,Changhong Liu,Shoushan Fan
DOI: https://doi.org/10.1039/c5ta04907e
IF: 11.9
2015-01-01
Journal of Materials Chemistry A
Abstract:The Coulomb band gap and Schottky barrier height of the MWNT–PDMS composite can be tuned by the MWNT loading, leading to performance variation on flexible electronics.
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