Title: MOCVD growth process and characterization of rare earth nanocomposite embedded in the indium gallium antimonide matrix
Takehiro Onishi,Tela Favaloro,Ali Shakouri,Elane Coleman,Gary S. Tompa,Stephan Kraemer,Hong Lu,Art Gossard,Nobuhiko P. Kobayashi
2015-01-01
Abstract:In the continuing quest for more efficient and environmentally friendly electrical power generation, new concept of solid-state thermoelectric devices are among the technological frontiers where applications of nanotechnology are expected to bringdramatic improvements in their overall performance. We propose the new design concept of thermoelectric devices based on a high-quality semiconductor host that contains semimetallic nanoparticles, referred to as “nanocomposite”. Two materials, Zn-doped InGaSb and ErSb are used as a host semiconductor and semimetallic nanoparticles, respectively. We use low-pressure metal organic chemical vapor deposition to grow ErSb nanoparticles embedded in Zn-doped InGaSb. Grown materials are structurally and electrically characterized to assess their potentials for thermoelectric devices. INTRODUCTION According to statistics, in 2005 the population of the world is 6.5 billion and the worldwide energy consumption is 8 billion tons equivalent to oil. However, only 35 % of consumed energy is used as energy source while the other 65 % is dumped as heat. Thus, high efficiency and environment friendly energy sources are strongly required to satisfy such a tight growing energy demand. Thermoelectrics is one of the expected candidates because of its durability due to no internal mechanical system and energy conversion from discarded heat. The requirement of thermoelectrics materials to the energy source application are 10 % conversion efficiency and 2.0 or more dimension less figure of merit. One of the most promising avenues for designing high-efficiency thermoelectric devices is to combine a bulk semiconductor host with semimetallic nanoparticles, referred to as nanocomposite. Nanocomposites are expected to exhibit three advantageous features; (1) high electrical conductivity owing to the high-quality host semiconductor and excess free carries supplied by semimetallic nanoparticles, (2) low thermal conductivity owing to embedded semimetallic nanoparticles that scatter long-wavelength phonons, and (3) high Seebeck coefficient realized by energy filtering at the interface between the semimetallic nanoparticles and the host semiconductor. Tuning these three features independently would lead us to a high ZT, thermoelectric figure of merit that cannot be obtained easily by traditional thermoelectric devices based on bulk semiconductors [1]. In general, semiconductors suitable for thermoelectric host materials have; small band gap and high carrier mobility. In our experiment described below, the host semiconductor is either InSb, one of group III-V compound semiconductor binary alloys, or InGaSb, one of group III-V compound semiconductor ternary alloys. InSb has a band gap of 0.17 eV (300 K), electron and hole mobilities 80000 and 1250 cm^2/Vs (300 K), respectively, and bulk ZT of InSb is 0.058 (300 K [2]). InGaSb has a band gap of 0.17 eV (300 K), electron and hole mobilities 5000 ~ 80000 and 850 ~ 1250 cm^2/Vs (300 K), respectively, and bulk ZT of InGaSb is 0.058 ~ 0.024 (300 K [2]). ErSb is chosen as a material for nanoparticles that are embedded in either InSb or InGaSb host. To enhance the thermoelectrics properties of the host materials InSb, III-V semiconductor, ErSb rare earth metal-V, is chosen for co-doped nanoparticles due to the chemical affinity. Palmstrøm et al. reported the lattice matching between InSb host material and ErSb achieved while the rare earth-V binary system offer a very large range of lattice parameters, 4.51 – 6.58 A which corresponds to lattice matched to InGaSb [3]. Free hole concentration in the host material is carefully tuned to optimize electrical conductivity minimizing degrading thermal conductivity .