The Single-Electron Transfer in Polysilicon-Oxide-Nitride-Oxide-Silicon Devices

Yingxiao Sheng,Yuhan Guo,Xiaoli Ji,Yiming Liao,Feng Yan

DOI: https://doi.org/10.1149/06001.0969ecst

2014-01-01

ECS Transactions

Abstract:In this study, the low voltage CHEI program is used to achieve single electron injection in nitride layer of nano-scaled SONOS (polysilicon-oxide-nitride-silicon) devices. By investigating various CHEI conditions and different temperature, the best single electron transfer condition is determined. Under this condition, the single electron induced current steps are in good agreement with theoretical result.