Abstract:Low-dimensional materials have an excellent prospect in thermoelectric applications. We have investigated the geometric structure, band structure, and electron transport properties of hydrogenated and pure multilayer silicene using first-principle calculation within density functional theory. The Boltzmann theory for electrons under relaxation time approximation was employed to obtain the Seebeck coefficient and electrical conductivity. The calculations of electron relaxation time were based on the deformation potential theory. Hydrogenation can effectively change the band structure of multilayer silicene. The simulation results reveal a big difference in the relaxation times between pure and hydrogenated structures. And, this difference decreases as the layer number n increases. The anisotropy of hydrogenated structures leads to a high thermoelectric performance along the armchair direction. When the layer number n is larger than 2, hydrogenation can greatly improve the electronic figure of merit ZT(e) of multilayer silicene. The band structure can also be engineered by adjusting the hydrogenation ratio. A band of 0.33 eV can be achieved when the hydrogenation ratio is 66.7%. By combining the adjustment of the hydrogenation ratio with the method of changing the geometric structure, a high thermoelectric performance can be achieved in multilayer silicene. The results provide a viable strategy for thermoelectric optimization in multilayer silicene, and can be potentially extended to the thermoelectric optimization of other two-dimensional materials.

Hydrogenation of Silicene with Tensile Strains

Electric field induced hydrogenation of silicene.

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Theoretical Investigation of the Role of Hydrogenation-Induced Strain in Single-Layer H10-Si.

Ordered and Reversible Hydrogenation of Silicene

Hydrogenation: an Effective Strategy to Improve the Thermoelectric Properties of Multilayer Silicene

Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

Hydrosilylation of C–C Π-Bonds

Influence of strain and electric field on the properties of silicane

Tuning the hydrogen evolution activity of MS2 (M = Mo or Nb) monolayers by strain engineering

Strain and water effects on the electronic structure and chemical activity of in-plane graphene/silicene heterostructure

Tuning The Thermal Conductivity Of Silicene With Tensile Strain And Isotopic Doping: A Molecular Dynamics Study

First-Principles Study on the Surface Chemistry of 1.4 Nm Silicon Nanocrystals: Case of Hydrosilylation

First-principles calculations of mechanical and electronic properties of silicene under strain

Effects of Temperature and Strain Rate on the Mechanical Properties of Silicene

Atomic‐Scale Core/Shell Structure Engineering Induces Precise Tensile Strain to Boost Hydrogen Evolution Catalysis

Strain boosts CO oxidation on Ni single-atom-catalyst supported by defective graphene

Strain and chirality effects on the mechanical and electronic properties of silicene and silicane under uniaxial tension

Hydrogenation of Carbon Nanotubes: Roles of Symmetry and Strain

The Role of Strain in Hydrogenation Induced Cracking in Si∕Si1−xGex∕Si Structures

In-plane strain engineering in ultrathin noble metal nanosheets boosts the intrinsic electrocatalytic hydrogen evolution activity