Observation of Optically Induced Transparency Effect in Silicon Nanophotonic Wires with Graphene

Longhai Yu,Jiajiu Zheng,Daoxin Dai,Sailing He
DOI: https://doi.org/10.1117/12.2047618
2014-01-01
Abstract:Graphene, a well-known two-dimensional sheet of carbon atoms in a honeycomb structure, has many unique and fascinating properties in optoelectronics and photonics. Integration of graphene on silicon nanophotonic wires is a promising approach to enhance light-graphene interactions. In this paper, we demonstrate on-chip silicon nanophotonic wires covered by graphene with CMOS-compatible fabrication processes. Under the illumination of pump light on the graphene sheet, a loss reduction of silicon nanophotonic wires, which is called optically induced transparency (OIT) effect, is observed over a broad wavelength range for the first time. The pump power required to generate the OIT effect is as low as similar to 0.1mW and the corresponding power density is about 2x10(3) mW/cm(2), which is significantly different from the saturated absorption effect of graphene reported previously. The extremely low power density implies a new mechanism for the present OIT effect, which will be beneficial to realize silicon on-chip all-optical controlling in the future. It also suggests a new and efficient approach to tune the carrier concentration (doping level) in graphene optically.
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