Stoichiometric Boron-Based Nanostructures

Limin Cao,Xiangyi Zhang,Wenkui Wang,Min Feng

DOI: https://doi.org/10.5772/34536

2012-01-01

Abstract:The elemental boron and boron-containing compounds hold a unique place in chemistry, physics, and materials science (Greenwood, 1973; Donohue, 1974; Matkovich, 1977; Emin, 1987; Albert & Hillebrecht, 2009). In general, they are composed of various multi-atom boron clusters, such as graphitic layer, octahedral B6 and icosahedral B12, among which the 12-atom B12 icosahedral cluster is the most common form (Greenwood, 1973; Donohue, 1974; Matkovich, 1977; Emin, 1987; Albert & Hillebrecht, 2009). The electronic properties of these boron clusters are characterized by the three-center electron-deficient bond, which presents some analogy with metallic bonding because electron deficiency forces electrons to be shared at the cluster surface(Greenwood, 1973; Donohue, 1974; Emin, 1987). Whereas these clusters are linked together by two-center covalent bonds, which lead to the intra-cluster and inter-cluster bonds have comparable strength (Greenwood, 1973; Donohue, 1974; Emin, 1987; Nelmes et al., 1995; Vast et al., 1997; Fujimori et al., 1999). These features make boronbased materials exhibit a wide variety of electronic properties ranging from semiconducting to superconducting. Furthermore, the boron clusters as structural units may be stacked in many different ways. This fact, coupled with the small size and high affinity of boron atoms, make boron-related materials form a unique family with an astonishing number of members.