Doping Induced Gap Anisotropy in Iron-Based Superconductors: A Point-Contact Andreev Reflection Study of Bafe2-Xnixas2 Single Crystals

Zhu Jun,Wang Zhao-Sheng,Wang Zhen-Yu,Hou Xing-Yuan,Luo Hui-Qian,Lu Xing-Ye,Li Chun-Hong,Shan Lei,Wen Hai-Hu,Ren Cong
DOI: https://doi.org/10.1088/0256-307x/32/7/077401
2015-01-01
Chinese Physics Letters
Abstract:We report a systematic investigation on c-axis point-contact Andreev reflection (PCAR) in BaFe2−xNixAs2 superconducting single crystals from underdoped to overdoped regions (0.075≤ x ≤0.15). At low temperatures, an in-gap sharp peak at low-bias voltage is observed in PCAR for overdoped samples, in contrast to the case of underdoped junctions, in which an in-gap plateau is observed. The variety of the conductance spectra with doping can be well described by using a generalized Blonder–Tinkham–Klapwijk formalism with an angle-dependent gap. This gap shows a clear crossover from a nodeless in the underdoped side to a nodal feature in the overdoped region. This result provides evidence of the doping-induced evolution of the superconducting order parameter when the inter-pocket and intra-pocket scattering are tuned through doping, as expected in the s± scenario.
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