A 1.4-GHz LC-VCO in 0.35μm digital CMOS technology

Yanfeng Su Yanfeng Su,Xiaofeng Yi Xiaofeng Yi,Zhiliang Hong Zhiliang Hong

DOI: https://doi.org/10.1109/ICASIC.2003.1277384

2003-01-01

Abstract:A 1.4GHz LC-tank voltage oscillator (VCO) is implemented with TSMC 0.35μm 1P4M digital CMOS technology. The VCO has a tuning range of 150MHz and a power consumption of 20mW. Spiral inductor and varactors are also on-chip and no off-chip components are needed.

What problem does this paper attempt to address?

A 1.4-GHz LC-VCO in 0.35/spl mu/m digital CMOS technology

Yanfeng Su Yanfeng Su,Xiaofeng Yi Xiaofeng Yi,Zhiliang Hong

DOI: https://doi.org/10.1109/icasic.2003.1277384

2003-01-01

Abstract:A 1.4GHz LC-tank voltage oscillator (VCO) is implemented with TSMC 0.35mm 1P4M digital CMOS technology. The VCO has a tuning range of 150MHz and a power consumption of 20mW. Spiral inductor and varactors are also on-chip and no off-chip components are needed.
An Improved Low Phase Noise LC-VCO with Wide Frequency Tuning Range Used in CPPLL

Xiaofeng Wang,Zhiyu Wang,Haoming Li,Rongqian Tian,Jiarui Liu,Faxin Yu

2017-01-01

Abstract:Based on TSMC 0.18 mu m CMOS process, a complementary cross-coupled differential LC voltage controlled oscillator (LC-VCO) used in charge pump phase-locked loop (CPPLL) frequency synthesizer for satellite receiver with low phase noise and wide frequency tuning range is designed and implemented. The VCO adopts self-bias structure to remove flicker noise produced by tail current. Programmable LC tanks are introduced at the common source of cross-couple transistors to eliminate second harmonics of resonant frequency. Distributed biasing is applied for a wider linear tuning range. An optimized switch is proposed to lower on-resistance. The measured results show that the VCO exhibits a 53.8% tuning range from 1.02GHz to 1.77GHz. From the carrier frequency of 1.4 GHz, the phase noise of the VCO can reach -131.2 dBc/Hz at 1MHz offset. The core circuit consumes 7.7mA with 1.8V supply voltage.
A 60GHz voltage-controlled oscillator with a 3.6GHz tuning range in 180nm CMOS technology

Yayue Dai,JinFang Zhou,Boyu Nie,Kangsheng Chen

DOI: https://doi.org/10.1109/PRIMEASIA.2009.5397440

2009-01-01

Abstract:The unlicensed band around 60 GHz has been allocated for wireless communications at data rates of several gigabits per second, consequently the high speed transceivers operating at 60 GHz is receiving significant research interest. This paper presents a 60 GHz voltage-controlled oscillator using linear superposition technique in SMIC 0.18 Â¿m CMOS technology. This technique demonstrates the design feasibility for an oscillator whose output frequency is much higher than the device fmax. The proposed circuit consists of a quadrature voltage-controlled oscillator (QVCO) and a transconductance stage. The circuit exhibits a wide tuning range of 3.6 GHz and a phase noise of -85 dBc/Hz at 1 MHz offset within the entire frequency range while consuming 30.8 mW power from a 1.4V supply voltage. The output power with a 50 Â¿ load is about -33 dBm without an output amplifier. In the real system, the output load should be replaced by 50-100fF capacitive load and the output power can reach about -20 dBm. The circuit occupies a core area of 650Ã700 Â¿m2.
A Ku-Band 20.4% Tuning Range VCO with a Tunable Harmonic-Resonant Transformer in 55 Nm CMOS

Yunshi Li,Xuepu Wu,Jiangmin Gu,Qun Jane Gu,Zhiwei Xu,Hanming Wu,Xiaopeng Yu

DOI: https://doi.org/10.1109/lmwt.2023.3244944

2023-01-01

Abstract:This letter presents a digital-process-based and wide-tuning-range voltage-controlled oscillator (VCO) with a tunable harmonic-resonant transformer. By adding fixed proportional common-mode (CM) and differential-mode (DM) capacitors banks, the first-to-second- and first-to-third-harmonic resonances are achieved across the entire frequency range lowering the average phase noise. A tunable transformer is also utilized to further widen the tuning range. The VCO is fabricated in a 55 nm complementary metal-oxide-semiconductor (CMOS) process without thick top metal, occupying an area of $0.59~\mathrm {mm^{2}}$ . It achieves a tuning range of 2.94 GHz (20.4%) with a center frequency of 14.4 GHz. The measured phase noise at 1-MHz offset is −108.62 dBc/Hz. The power consumption of the oscillator core is 15 mW with a supply of 1.2 V, demonstrating a figure of merit (FOM) and FOM $\mathrm {_{T}}$ of −180.10 and −186.22 dBc/Hz, respectively.
A 1-Mw K-band Gate AC-coupled VCO with 0.25 V Supply Voltage

C. L. Jin,X. P. Yu,C. Feng,W. M. Lim,Z. H. Lu,K. S. Yeo

DOI: https://doi.org/10.1007/s10470-013-0123-x

IF: 1.321

2013-01-01

Analog Integrated Circuits and Signal Processing

Abstract:A K-band low-voltage voltage controlled oscillator (VCO) implemented in standard 65-nm bulk CMOS process is proposed. By using the proposed gate AC-coupling technique and biasing the cross-coupled transistors in moderate inversion region, the oscillator core operates under ultra low supply voltage with acceptable current efficiency. Reverse short-channel effect is also employed to reduce the threshold voltage of the cross-coupled transistors. Operating from 23.1 to 24.8 GHz, the fabricated VCO is able to work under supply voltage as low as 0.25 V with a core power consumption of 1 mW.
A 3 GHz Low Power LC VCO with Voltage Boosted Circuit from 0.5 V Supply

周海峰,韩雁,董树荣,韩晓霞,王春晖

DOI: https://doi.org/10.3969/j.issn.1000-3819.2010.01.018

2010-01-01

Abstract:Implemented in a standard 0.13 μm CMOS process,a 0.5 V 3 GHz low power voltage controlled oscillator(VCO)is presented.Due to the use of the N-pair only voltage-biased oscillator,two tail inductors instead of the tail current source,the inductive voltage control technique,and a voltage-boosted tuning technique,the VCO measured has a phase noise of-113.83 dBc/Hz at 1 MHz offset from 3.126 GHz oscillation frequency with 1.765 mW power dissipation from 0.5 V power supply and approximately 12% tuning range.The figure of merit is-186.2 dB and the chip area is 0.96 mm×0.9 mm.
A Low Power 1.0 GHz VCO in 65Nm-Cmos LP-process.

Zhang,Zhiyi Yu,Xu Cheng,Xiaoyang Zeng

DOI: https://doi.org/10.1109/asicon.2011.6157377

2011-01-01

Abstract:A 1.0GHz, Voltage Controlled Oscillator (VCO) fabricated in TSMC 1.2V 1P9M 65nm CMOS LP-Process is presented in the paper. The output frequency is proportional to the control voltage (Vctrl). The advantage of the architecture is very simple and easy to be realized and it aims at low power, low area and low cost. Measured results show that the VCO operates at 400 MHz to 1.6 GHz while Vctl ranges from 0.8V to 1.4V and the tuning range is even larger than 100%. The VCO works well in Register File and consumes 0.5 mA from a 1.2-V power supply, and occupies an area of 400 μm2.
An Ultra-Low-Voltage High-Performance VCO in 0.13 μm CMOS

H. F. Zhou,Y. Han,S. R. Dong,C. H. Wang

DOI: https://doi.org/10.1163/156939308787543778

2012-01-01

Journal of Electromagnetic Waves and Applications

Abstract:An LC voltage-controlled oscillator (VCO) is proposed to achieve low-phase-noise and low-power designs even at a 0.5 V supply. The advantages of the proposed LC VCO are described together with its detailed analysis and its characteristics. Despite of the low power supply, the VCO achieves wide tuning range by using a. voltage-boosted technique which can generate voltage higher than the supply voltage to bias the varactors. The VCO measures a phase noise of -113.83 dBc/Hz at 1MHz offset from 3.126 GHz oscillation frequency with 1.765 mW power dissipation drawn from 0.5 V power supply. The figure-of-merit (FOM) for this VCO is comparable to that of other state-of-the-art VCO designs operating at much higher supply voltage.
A design of low power multi-GHz LC VCO

huailin liao,jinglin shi

DOI: https://doi.org/10.1109/ICASIC.2003.1277397

2003-01-01

Abstract:A 1.8 V, 1.5 mA fully integrated LC-tank voltage controlled oscillator fabricated in a 0.18 μm CMOS process is presented. VCO is tunable between 3.53 GHz and 4.0 GHz and displays a phase noise between -118dBc/Hz and $112dBc/Hz at 3 MHz offset frequency across the tuning frequency range. This low power consumption is achieved through optimized design of LC tank based on power constraints.
An Accurate 1.08-Ghz CMOS LC Voltage-Controlled Oscillator

Zhangwen Tang,Jie He,Hongyan Han,Hao Min

DOI: https://doi.org/10.1109/aspdac.2005.1466482

2005-01-01

Abstract:An accurate 1.08-GHz CMOS LC voltage-controlled oscillator is implemented in a 0.35/spl mu/m standard 2P4M CMOS process. In this paper we present a new convenient method of calculation of oscillating period. With this period calculation technique, the frequency tuning curves agree perfectly with the experiment. At a 3.3-V supply, the LC-VCO measures a phase noise of 82.2 dBc/Hz at a 10 kHz frequency offset while dissipating 3.1mA current. Chip size is 0.86mm /spl times/ 0.82mm.
A broadband CMOS LC voltage-controlled oscillator for FMCW synthesizer

Liheng Lou,Supeng Liu,Bo Chen,Kai Tang

DOI: https://doi.org/10.1109/ISICIR.2014.7029499

2014-01-01

Abstract:A broadband CMOS LC voltage controlled oscillator (VCO) for an FMCW synthesizer application was developed, which achieves wide tuning range and low phase noise. The VCO employs a topology of NMOS cross-coupled pair and NMOS tail current source. In order to lower phase noise while fulfill continuous tuning range of 2GHz, P-type AMOS varactors are used, which connect to LC tank through a MIM coupling capacitor. This VCO is implemented in a 65 nm CMOS RF technology. Post-layout simulation shows that, consuming 17.4mW under a 1.2 V supply, the proposed VCO can be tuned from 14.09 to 16.28 GHz and exhibits phase noise of -109dBc/Hz at 1 MHz offset from the 14.4 GHz carrier. VCO figure-of-merit (FoM) of -180.2dBc/Hz and FoMT of -183.4dBc/Hz are achieved.
A 2ghz Low Power Differentially Tuned CMOS Monolithic LC-VCO

Li Zhang,Baoyong Chi,Jinke Yao,Zhihua Wang,Hongyi Chen

DOI: https://doi.org/10.1109/isce.2006.1689429

2006-01-01

Journal of Semiconductors

Abstract:A 2GHz differentially tuned CMOS monolithic LC-VCO is designed and fabricated in a 0. 18μm CMOS process. The VCO has a 16.15% tuning range (from 1. 8998 to 2. 2335GHz) through a combination of analog and digital tuning techniques (4-bit binary switch-capacitor array). The measured phase noise is - 118.17dBc/Hz at a 1MHz offset from a 2. 158GHz carrier. With the presented improved switch,the phase noise varies no more than 3dB at different digital control bits. The phase noise changes only by about 2dB in the tuning range because of the pn-junctions as the varactors. The VCO draws a current of about 2. 1mA from a 1.8V power supply and works normally with a 1.5V power supply.
A 1.0-to-2.4ghz Wideband VCO with Uniform Sub-Band Interval and Constant Tuning Gain

Chenyang Kong,Xiaodong Liu,Weigang Xu,Zhangwen Tang

DOI: https://doi.org/10.1109/asicon.2017.8252474

2017-01-01

Abstract:This paper presents a 1.0-to-2.4GHz wideband voltage controlled oscillator(VCO) designed in TSMC 0.18μm CMOS technology process, which uses complementary structure. And its LC tank consists of a differential inductor, a main varactor pair, a varactor array and a capacitor array, those components realize 256 sub-bands. By optimizing the array, the sub-band interval is kept 5.45 MHz, the tuning gain at the center of sub-band is kept 10.5 MHz/V. The single side phase noise of the center frequency is -103.4 dBc/Hz at 100 kHz offset and -129.1 dBc/Hz at 1 MHz offset. The whole circuit consumes 14.8 mA from 1.8 V supply voltage at the center frequency.
A 1.8-V 2.4/5.15-Ghz Dual-Band LCVCO in 0.18-/Spl Mu/m CMOS Technology

L Jia,JG Ma,KS Yeo,XP Yu,MA Do,WM Lim

DOI: https://doi.org/10.1109/lmwc.2006.872126

IF: 3

2006-01-01

IEEE Microwave and Wireless Components Letters

Abstract:A dual band, fully integrated, low phase-noise and low-power LC voltage-controlled oscillator (VCO) operating at the 2.4-GHz industrial scientific and medical band and 5.15-GHz unlicensed national information infrastructure band has been demonstrated in an 0.18-/spl mu/m CMOS process. At 1.8-V power supply voltage, the power dissipation is only 5.4mW for a 2.4-GHz band and 8mW for a 5.15-GHz band. The proposed VCO features phase-noise of -135dBc/Hz at 3-MHz offset frequency away from the carrier frequency of 2.74GHz and -126dBc/Hz at 3-MHz offset frequency away from 5.49GHz. The oscillator is tuned from 2.2 to 2.85GHz in the low band (2.4-GHz band) and from 4.4 to 5.7GHz in the high band (5.15-GHz band).
A 4.4-Ghz 193.2-Db FoM 8-Shaped-inductor Based LC-VCO Using Orthogonal-Coupled Triple-Coil Transformer

Yaqian Sun,Wei Deng,Haikun Jia,Zhihua Wang,Baoyong Chi

DOI: https://doi.org/10.1109/tcsii.2022.3186304

2022-01-01

Abstract:A 4.2-to-4.6 GHz 8-shaped-inductor based LC-VCO with an orthogonal-coupled triple-coil transformer is presented in this brief. The orthogonal-coupled triple-coil transformer is designed to reduce magnetic coupling and improve phase noise. The mutual inductance between the 8-shaped inductor and the tail-filtering inductor is negligible due to the symmetrical and reversal magnetic field generated by the two loops of the 8-shaped inductor, which avoids the additional chip area occupation of the bulky tail-filtering inductor. In addition, an 8-shaped transformer with thin line width is proposed to bias the varactor instead of using resistors, which avoids the resistor thermal noise contribution. The VCO is implemented in a 180 nm CMOS process, which consumes 7.4 mA current from a 1 V power supply. By adopting the 8-shaped inductor with noise filtering and noise-free biasing technique from the orthogonal-coupled triple-coil transformer, the measured phase noise achieves −149.3 dBc/Hz at 10 MHz offset away from a 4.3 GHz carrier and the resulting figure-of-merit (FoM) is −193.2 dB. To the best knowledge of the authors, this brief presents the VCO with the best FoM among published 8-shaped-inductor based LC-VCOs.
A 1.0 V Differential VCO in 0.13 Μm CMOS Technology

Cao Shengguo,Han Kefeng,Tan Xi,Yan Na,Min Hao

DOI: https://doi.org/10.1088/1674-4926/32/2/025010

2011-01-01

Abstract:A differential complementary LC voltage controlled oscillator(VCO) with high Q on-chip inductor is presented.The parallel resonator of the VCO consists of inversion-mode MOS(I-MOS) capacitors and an on-chip inductor.The resonator Q factor is mainly limited by the on-chip inductor.It is optimized by designing a single turn inductor that has a simulated Q factor of about 35 at 6 GHz.The proposed VCO is implemented in the SMIC 0.13μm 1P8M MMRF CMOS process,and the chip area is 1.0×0.8 mm~2.The free-running frequency is from 5.73 to 6.35 GHz.When oscillating at 6.35 GHz,the current consumption is 2.55 mA from a supply voltage of 1.0 V and the measured phase noise at 1 MHz offset is -120.14 dBc/Hz.The figure of merit of the proposed VCO is -192.13 dBc/Hz.
An Ultra-Low-Power 65 nm Single-Tank 24.5-to-29.1 GHz Gm-Enhanced CMOS LC VCO Achieving 195.2 dBc/Hz FoM at 1 MHz

Abdullah Kurtoglu,Amir H. M. Shirazi,Shahriar Mirabbasi,Hossein Miri Lavasani

DOI: https://doi.org/10.3390/electronics13061162

IF: 2.9

2024-03-22

Electronics

Abstract:A low-power single-core 24.5-to-29.1 GHz CMOS LC voltage-controlled oscillator (VCO) is presented. The proposed VCO uses an innovative differential cross-coupled architecture in which an additional pair is connected to the main pair to increase the effective transconductance, resulting in lower power consumption and reduced phase noise (PN). The proposed VCO is fabricated in a 1P9M standard CMOS process and sustains oscillation at 29.14 GHz with power consumption as low as 455 μW (650 μA from a 0.7 V supply), which is ~20% lower than a conventional CMOS LC VCO without Gm-enhanced differential pairs built through the same process (700 μA from 0.8 V supply). When consuming 880 μW (1.1 mA from 0.8 V), the proposed VCO exhibits a tuning range of 4.6 GHz (from 24.5 GHz to 29.1 GHz). Moreover, it exhibits a measured phase noise (PN) better than −106.5 dBc/Hz @ 1 MHz and −132.0 dBc/Hz @ 10 MHz, with figure-of-merit (FoM) results of 195.2 dBc/Hz and 200.3 dBc/Hz, respectively.

engineering, electrical & electronic,computer science, information systems,physics, applied
A 5-8 GHz Wideband and Low Phase Noise Cross-Coupled LC VCO Using 6-bit DCCA in 40nm CMOS Process

Yang Jiang,Chao Shen,Tianxiang Wu,Hao Chen,Shunli Ma,Junyan Ren

DOI: https://doi.org/10.1109/icsict55466.2022.9963377

2022-01-01

Abstract:This paper presents a broadband and low phase noise LC voltage-controlled oscillator (VCO) implemented in SMIC 40nm CMOS process. The VCO uses 6-bit digitally-controlled capacitor array (DCCA), achieving a large tuning range of 47.5% and a maximum tuning sensitivity of only 80MHz/V. Besides, by optimizing the layout of DCCA, it achieves a low phase noise of - 121.7dBc/Hz at 1MHz frequency offset at 8 GHz output frequency at room temperature. The fluctuation value of phase noise is less than 3.5dBc/Hz in the temperature range of -55°C to 125°C. Meanwhile, in order to improve the control voltage variation range, the varactor transistor adopts the one with the withstand voltage value of 2.5 V, and the quiescent current of the circuit is around 11mA at 1.2V, and the layout area is around 0.21×0.35mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
A Low Phase-Noise LC Voltage Controlled Oscillator in CMOS Technology

ZHANG Yuan,YI Xiao-feng,HONG Zhi-liang

DOI: https://doi.org/10.3969/j.issn.1004-3365.2006.02.020

2006-01-01

Abstract:A monolithic LC voltage controlled oscillator(VCO) for PLL frequency synthesizer is presented.On designing the VCO,several optimizations have been added to the traditional circuit architecture,which efficiently reduces phase noise on the basis of sufficient tuning range.Using on-chip spiral inductors,the VCO was implemented in SMIC′s 0.35 μm 1P6M mixed-signal CMOS technology.Measured results show that the VCO has a tunable frequency of 3 GHz to 3.55 GHz.Phase noise in the vicinity of the center frequency(3.55 GHz) reaches-128 dBc/Hz at 600 kHz offset.The VCO operates under a supply voltage of 3.3 V and consumes 13 mA of current.
An 8-12Ghz Class-F3 VCO with Multi-LC Tank in 28nm CMOS.

Tao Wang,Wei Li,Haoyang Zhou,Jiao Ye,Yuanyuan Xu

DOI: https://doi.org/10.1109/asicon47005.2019.8983492

2019-01-01

Abstract:This paper presents an 8-12GHz wideband Class-F 3 voltage controlled oscillator (VCO) in 28nm CMOS. A multi-LC-tank is used to create two impedance peaks that are located at the fundamental frequency (f o ) and the 3 rd harmonic (3f o ). Due to the pseudo-squaring drain-voltage waveform, the 1/f 3 phase noise caused by the up-conversion of the MOS device's 1lf noise is reduced. A 7bit switched capacitor array is used to divide the frequency range of 8-12GHz into 128 sub-bands, which aims to reduce the VCO gain (Kyco). A compensatory switched capacitor is proposed to help get better phase noise (PN) at low frequency. An on-chip buffer is cascaded for test purpose. The post simulation results show that over the entire band of 8-12GHz, we obtain a maximal Kvco of 80MHz/V and a PN better than -115dBc/Hz at IMHz offset. The VCO core consumes 11.3mW from 0.6V power supply and the total chip occupies 0.412mm2 without pad.

A 1.4-GHz LC-VCO in 0.35μm digital CMOS technology

A 1.4-GHz LC-VCO in 0.35/spl mu/m digital CMOS technology

An Improved Low Phase Noise LC-VCO with Wide Frequency Tuning Range Used in CPPLL

A 60GHz voltage-controlled oscillator with a 3.6GHz tuning range in 180nm CMOS technology

A Ku-Band 20.4% Tuning Range VCO with a Tunable Harmonic-Resonant Transformer in 55 Nm CMOS

A 1-Mw K-band Gate AC-coupled VCO with 0.25 V Supply Voltage

A 3 GHz Low Power LC VCO with Voltage Boosted Circuit from 0.5 V Supply

A Low Power 1.0 GHz VCO in 65Nm-Cmos LP-process.

An Ultra-Low-Voltage High-Performance VCO in 0.13 μm CMOS

A design of low power multi-GHz LC VCO

An Accurate 1.08-Ghz CMOS LC Voltage-Controlled Oscillator

A broadband CMOS LC voltage-controlled oscillator for FMCW synthesizer

A 2ghz Low Power Differentially Tuned CMOS Monolithic LC-VCO

A 1.0-to-2.4ghz Wideband VCO with Uniform Sub-Band Interval and Constant Tuning Gain

A 1.8-V 2.4/5.15-Ghz Dual-Band LCVCO in 0.18-/Spl Mu/m CMOS Technology

A 4.4-Ghz 193.2-Db FoM 8-Shaped-inductor Based LC-VCO Using Orthogonal-Coupled Triple-Coil Transformer

A 1.0 V Differential VCO in 0.13 Μm CMOS Technology

An Ultra-Low-Power 65 nm Single-Tank 24.5-to-29.1 GHz Gm-Enhanced CMOS LC VCO Achieving 195.2 dBc/Hz FoM at 1 MHz

A 5-8 GHz Wideband and Low Phase Noise Cross-Coupled LC VCO Using 6-bit DCCA in 40nm CMOS Process

A Low Phase-Noise LC Voltage Controlled Oscillator in CMOS Technology

An 8-12Ghz Class-F3 VCO with Multi-LC Tank in 28nm CMOS.