Properties of Spontaneous Emission in Semiconductor Structures

CLA Hooijer,GX Li,K Allaart,D Lenstra

DOI: https://doi.org/10.1117/12.356923

1998-01-01

Abstract:A quantum mechanical description is presented of the electromagnetic field produced by a semiconductor quantum well within a passive dielectric multilayer structure. The method is suitable to deal with relatively complicated structures as it avoids an explicit mode decomposition of the electromagnetic field. Instead, only the classical Greens tensor, which is characteristic of a certain passive structure, is required. Our central result is a general expression for the spontaneous emission rate, that we apply to a quantum well embedded in a three-layer (waveguide) structure. The dependence of the spontaneous emission rate on the thickness of the middle layer, or on the position of the quantum well in it, is shown to be smooth. But the separate continuous (radiation modes) and discrete (guided modes) contributions to this rate show peculiar cusps as a function of this thickness, and these discontinuities are analyzed.