Bandgap Enhancement: Bandgap Control of the Oxygen‐Vacancy‐Induced Two‐Dimensional Electron Gas in SrTiO3 (adv. Mater. Interfaces 6/2014)

Z. Q. Liu,W. Lu,S. W. Zeng,J. W. Deng,Z. Huang,C. J. Li,M. Motapothula,W. M. Lü,L. Sun,K. Han,J. Q. Zhong,P. Yang,N. N. Bao,W. Chen,J. S. Chen,Y. P. Feng,J. M. D. Coey,T. Venkatesan,Ariando
DOI: https://doi.org/10.1002/admi.201470040
IF: 5.4
2014-01-01
Advanced Materials Interfaces
Abstract:SrTiO3 to modern oxide electronics is like silicon to the entire semiconductor industry. Z. Q. Liu, Ariando, and co-workers show in article 1400155 that the bandgap of SrTiO3 can be 20% larger in thin films than in the bulk. Such bandgap enhancement can change several properties. For example, it can vary the electronic and magnetic phases of SrTiO3-based interface systems.
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