Abstract:Perovskite solar cells (PSCs) have triggered a research trend in solar energy devices in view of their high power conversion efficiency and ease of fabrication. However, more delicate strategies are still required to suppress carrier recombination at charge transfer interfaces, which is the necessary path to high‐efficiency solar cells. Here, a p‐p + homojunction is constructed on basis of NiO film to enhance hole transfer in an inverted planar perovskite solar cell. The homojunction is generated by fabricating NiO/Cu:NiO bilayer film. The density functional theory (DFT) calculation demonstrates the charge density difference in the two layers, which could generate a space charge region and a band bending at the junction, and the result is further proved by energy level structure analysis of NiO and Cu:NiO films. The designed homojunction could accelerate the hole transfer and inhibit carrier recombination at the interface between hole transfer layer and perovskite layer. Finally, the inverted planar perovskite solar cell with p‐p + homojunction shows an efficiency of 18.30% and a high fill factor of 0.81, which are much higher than the counterpart of the PSCs individually using NiO or Cu:NiO as hole transfer layer. This work develops a new structure of hole transport layer to enhance the performance of PSCs, and also provides new ideas for design of charge transfer films.

Hole-conductor-free planar perovskite solar cells with 16.0% efficiency

Hole Blocking Layer-Free Perovskite Solar Cells with over 15% Efficiency

High Efficiency Inverted Planar Perovskite Solar Cells with Solution-Processed NiOx Hole Contact.

High-performance inverted planar heterojunction perovskite solar cells based on a solution-processed CuOx hole transport layer.

Efficient planar heterojunction perovskite solar cells employing graphene oxide as hole conductor.

Hole-Transport Management Enables 23%-Efficient and Stable Inverted Perovskite Solar Cells with 84% Fill Factor

CuSCN-Based Inverted Planar Perovskite Solar Cell with an Average PCE of 15.6%.

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High efficiency and junction property

High Electron Affinity Enables Fast Hole Extraction for Efficient Flexible Inverted Perovskite Solar Cells

Controllable Perovskite Crystallization at a Gas-Solid Interface for Hole Conductor-Free Solar Cells with Steady Power Conversion Efficiency over 10%.

A Dopant-Free Organic Hole Transport Material For Efficient Planar Heterojunction Perovskite Solar Cells

High Photovoltage Inverted Planar Heterojunction Perovskite Solar Cells with All-Inorganic Selective Contact Layers.

ganic hole transport material for e ffi cient planar heterojunction perovskite solar cells †

A p‐p + Homojunction‐Enhanced Hole Transfer in Inverted Planar Perovskite Solar Cells

A hole-conductor–free, fully printable mesoscopic perovskite solar cell with high stability

Perovskite Solar Cells with 18.21% Efficiency and Area over 1 Cm(2) Fabricated by Heterojunction Engineering

Enhanced Photovoltage for Inverted Planar Heterojunction Perovskite Solar Cells

Solution‐Grown Monocrystalline Hybrid Perovskite Films for Hole‐Transporter‐Free Solar Cells

High-Performance Planar Perovskite Solar Cells Using Low Temperature, Solution-Combustion-Based Nickel Oxide Hole Transporting Layer with Efficiency Exceeding 20%

High-Performance Inverted Planar Perovskite Solar Cells Enhanced by Thickness Tuning of New Dopant-Free Hole Transporting Layer

High-Performance Graphene-Based Hole Conductor-Free Perovskite Solar Cells: Schottky Junction Enhanced Hole Extraction and Electron Blocking