Abstract:The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic characteristics of GaN HEMT are compared with Si-IGBT, including forward and reverse conducting character, and switching time. Then, the elemental switching losses are analyzed based on measured data. Finally, on a complementary buck converter level, the overall efficiency and EMI-related common-mode currents are compared. For the tested conditions, it is found that the GaN HEMT switching loss is much less than for the same power class IGBT. However, it is worth noting that special attention should be paid to reverse conduction losses in the PWM dead time (or dead band) of complementary-modulated converter legs. When migrating from IGBT to GaN, choosing a dead-time and negative gate drive voltage in conventional IGBT manner can make GaN reverse conducting losses high. It is suggested to use 0 V turn-off gate voltage and minimize the GaN dead time in order to make full use of the GaN advantages.

Loss Analysis of GaN Devices in an Isolated Bidirectional DC-DC Converter

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

Loss Analysis of A High Efficiency Gan and Si Device Mixed Isolated Bidirectional Dc-Dc Converter

Analysis of MHz 380V-12V DCX with Low FoM Device

A High Frequency High Efficiency GaN Based Bi-Directional 48V/12V Converter with PCB Coupled Inductor for Mild Hybrid Vehicle

Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications

GaN transistor based Bi-directional DC-DC converter for stationary energy storage device for 400V DC microgrid

A Buck Converter with Cost-Effective GaN/Si Hybrid Switches and CRM Operation for High-Efficiency and High-Power-Density Applications

Design Considerations of an Isolated GaN Bidirectional Dc-Dc Converter

A 98.3% Efficient GaN Isolated Bidirectional DC–DC Converter for DC Microgrid Energy Storage System Applications

An 8A 998A/inch<SUP>3</SUP> 90.2% Peak Efficiency 48V-to-1V DC-DC Converter Adopting On-Chip Switch and GaN Hybrid Power Conversion

Loss Analysis in Wireless Power Transfer System Based on GaN

A Unified Switch Loss Model and Design Consideration for Multilevel Boost PFC with GaN Devices

A Novel Non-isolated GaN-based DC-DC Converter with High Step-Down Gain

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

Distributed Energy Storage Device Based on a Novel Bidirectional Dc-Dc Converter with 650V GaN Transistors

Factors and Considerations for Modeling Loss of a GaN-based Inverter

A Novel Nonisolated GaN-Based Bidirectional DC–DC Converter With High Voltage Gain

Evaluation and applications of 600V/650V enhancement-mode GaN devices

Analytical Switching Loss Model for GaN-Based Control Switch and Synchronous Rectifier in Low-Voltage Buck Converters

A Postprocessing-Technique-Based Switching Loss Estimation Method for GaN Devices