Abstract:Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm ZnGa_2O_4$ may be suitable for these applications, standing out as an alternative to $\rm Ga_2O_3$. The simple face centered cubic spinel structure of $\rm ZnGa_2O_4$ results in isotropic electronic and optical properties, in contrast to the large anisotropic properties of the $\beta$-monoclinic $\rm Ga_2O_3$. In addition, $\rm ZnGa_2O_4$ has shown, on average, better thermal dissipation and potential for $n$- and $p$-type conductivity. Here we use density functional theory and hybrid functional calculations to investigate the electronic, optical, and point defect properties of $\rm ZnGa_2O_4$, focusing on the possibility for $n$- and p-type conductivity. We find that the cation antisite $\rm Ga_{Zn}$ is the lowest energy donor defect that can lead to unintentional $n$-type conductivity. The stability of self-trapped holes (small hole polarons) and the high formation energy of acceptor defects make it difficult to achieve $p$-type conductivity. However, with excess of Zn, forming $\rm Zn_{(1+2x)}Ga_{2(1-x)}O_4$ alloys display an intermediate valence band, facilitating $p$-type conductivity. Due to the localized nature of this intermediate valence band, $p$-type conductivity by polaron hopping is expected, explaining the low mobility and low hole density observed in recent experiments.

First-Principles Study of P-Type Conductivity of N-Al/Ga/In Co-Doped Zno

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

First-Principles Study of P-Type Nitrogen/Aluminum Co-Doped Zinc Oxide

Comparative Study of C-III Group Elements Codoped ZnO by First-Principles

First‐principles Study of the Al‐N co‐doped Zincblende ZnO

First-Principle Study on the Electronic Structure and P-Type Conductivity of Zno

First-Prinicples Study of Mn-N Co-Doped P-Type Zno

First-principles Calculation of Electronic Structure and Optical Properties of Al,Ga Doped ZnO

Comparisons of ZnO Codoped by Group IIIA Elements (al, Ga, In) and N: a First-Principle Study

Achieving High Conductivity P-Type Ga2O3 Through Al-N and In-N Co-Doping

First-Principles Study of Ag-N Dual-Doped P-Type Zno

Theoretical investigation on electronic and optical properties of ZnO doped with Al,Ga and In

First-Principles Study on Electronic Structures of Al, N Co-Doped Zno Nanotubes

First-principles study of Al, N codoped p-type ZnS

Effects of Cu, Zn Doping on the Structural, Electronic, and Optical Properties of α-Ga2O3: First-Principles Calculations

First-principles Study on Electronic and Optical Properties of S, N Single-Doped and S-N Co-Doped ZnO

A First Principles Study of P-Type Doping in Two Dimensional GaN.

First Principles Study of P-Type Transition and Enhanced Optoelectronic Properties of G-Zno Based on Diverse Doping Strategies

First-Principle Studies on Conductive Behaviors of P-Type Zno Codoped by N and B

First Principles Calculation of Ga-N Codoped Wurtzite Zno

Pushing p-type conductivity in ZnO by (Zr, N) codoping: A first-principles study