Abstract:Understanding and manipulating properties emerging at a surface or an interface require a thorough knowledge of structure-property relationships. We report a study of a prototype oxide system, $\mathrm{L}{\mathrm{a}}_{2/3}\mathrm{S}{\mathrm{r}}_{1/3}\mathrm{Mn}{\mathrm{O}}_{3}$ grown on $\mathrm{SrTi}{\mathrm{O}}_{3}(001)$, by combining in situ angle-resolved x-ray photoelectron spectroscopy, ex situ x-ray diffraction, and scanning transmission electron microscopy/spectroscopy with electric transport measurements. We find that $\mathrm{L}{\mathrm{a}}_{2/3}\mathrm{S}{\mathrm{r}}_{1/3}\mathrm{Mn}{\mathrm{O}}_{3}$ films thicker than 20 unit cells (u.c.) exhibit a universal behavior with no more than one u.c. intermixing at the interface but at least 3 u.c. of Sr segregation near the surface, which is (La/Sr)O terminated. The conductivity vs film thickness shows the existence of nonmetallic layers with thickness $\ensuremath{\sim}6.5\ifmmode\pm\else\textpm\fi{}0.9\phantom{\rule{0.16em}{0ex}}\mathrm{u}.\mathrm{c}.$, which is independent of film thickness but mainly relates to the deviation of Sr concentration near the surface region. Below 20 u.c., the surface of the films appears mixed, (La/Sr)O with ${\mathrm{MnO}}_{2}$ termination. Decreasing film thickness to less than 10 u.c. leads to the enhanced deviation of chemical composition in the films and eventually drives the film insulating. Our observation offers a natural explanation for the thickness-driven metal-nonmetal transition in thin films based on the variation of film stoichiometry.

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