Abstract:The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

High-quality InP Nanoneedles Grown on Silicon

Tailoring the Optical Characteristics of Microsized InP Nanoneedles Directly Grown on Silicon

InP nanocrystals on silicon for optoelectronic applications

Nanopillar lasers directly grown on silicon with heterostructure surface passivation.

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

Synthesis, Microstructure, Growth Mechanism and Photoluminescence of High Quality [0001]-Oriented Inn Nanowires and Nanonecklaces

Single Crystalline InGaAs Nanopillar Grown on Polysilicon with Dimensions beyond Substrate Grain Size Limit

High-Density Se Nanoneedles Having No Catalyst Tips Quasi-Vertically Grown on Quartz Substrates Via Destructive Thermal Evaporation

Optimization of the structural and optical quality of InN nanowires on Si(111) by molecular beam epitaxy

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit

A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications

InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

Wavelength-tunable InAsP Quantum Dots in InP Nanowires

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

High brightness InP micropillars grown on silicon with Fermi-level splits larger than 1 eV