Abstract:A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d states and the relative energetic alignment - and hence internal electric fields - within the LaAlO3 layer. Firstly, the Ti 2p core level spectra clearly show occupation of Ti 3d states already for two unit cells of LaAlO3. Secondly, the LaAlO3 core levels were seen to shift to lower binding energy as the LaAlO3 overlayer thickness, n, was increased - agreeing with the expectations from the canonical electron transfer model for the emergence of conductivity at the interface. However, not only is the energy offset of only 300meV between n=2 (insulating interface) and n=6 (metallic interface) an order of magnitude smaller than the simple expectation, but it is also clearly not the sum of a series of unit-cell by unit-cell shifts within the LaAlO3 block. Both of these facts argue against the simple charge-transfer picture involving a cumulative shift of the LaAlO3 valence bands above the SrTiO3 conduction bands, resulting in charge transfer only for n>3. Turning to the theoretical data, our density functional simulations show that the presence of oxygen vacancies at the LaAlO3 surface at the 25% level reverses the direction of the internal field in the LaAlO3. Therefore, taking the experimental and theoretical results together, a consistent picture emerges for real-life samples in which nature does not wait until n=4 and already for n=2, mechanisms other than internal-electric-field-driven electron transfer from idealized LaAlO3 to near-interfacial states in the SrTiO3 substrate are active in heading off the incipient polarization catastrophe that drives the physics in these systems.

Metal-Insulator Transition at A Depleted Laalo3/Srtio3 Interface: Evidence for Charge Transfer Induced by Srtio3 Phase Transitions

The interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies in insulator-metal transition of LaAlO$_{3}$/SrTiO$_{3}$

Charge Ordering Transition Near The Interface Of The (011)-Oriented La1-Xsrxmno3 (X Similar To 1/8) Films

Locally Enhanced Conductivity Due to the Tetragonal Domain Structure in Laalo3/Srtio3 Heterointerfaces

Hidden lattice instabilities as origin of the conductive interface between insulating LaAlO3 and SrTiO3

Hidden lattice instabilities as origin of the conductive interface between insulating LaAlO 3 and SrTiO 3

Spin-Dependent Transport Across Co/Laalo3/Srtio3 Heterojunctions

Strain-assisted Tunneling Current Through TbMnO3∕Nb-1 Wt %-Doped SrTiO3 P–n Junctions

Nonmonotonic Anisotropy in Charge Conduction Induced by Antiferrodistortive Transition in Metallic Srtio3

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Rectifying Behaviours of Heterojunctions Composed of Manganites with Different Resistive Properties

Metal and Annealing Atmospheres Dependence of Resistive Switching in Metal/Nb-0.7wt%-Srtio3 Interfaces

Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

Robust Interfacial Exchange Bias and Metal Insulator Transition Influenced by the Lanio3 Layer Thickness in La0.7sr0.3mno3/Lanio3 Superlattices

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

A Gate-tunable Polarized Phase of Two-Dimensional Electrons at the LaAlO3/SrTiO3 Interface

Insulator-Metal transition in the Doped 3d1 Transition Metal Oxide LaTiO3

Ferroelectric Exchange Bias Affects Interfacial Electronic States

Hard x-ray photoemission and density functional theory study of the internal electric field in SrTiO3/LaAlO3 oxide heterostructures

Metal-Insulator Transition of LaNiO3 Films in LaNiO3/SrIrO3 Heterostructures

Electronic charges and electric potential at LaAlO3/SrTiO3 interfaces studied by core-level photoemission spectroscopy