Abstract:It is showed that h‐BN encapsulation greatly removes the defect‐related gap states by stabilizing the chemisorbed oxygen molecules onto the defects of monolayer transition metal dichalcogenide (TMD) crystals. By using electron energy loss spectroscopy (EELS) and optical spectroscopic measurements, this work unprecedentedly reveals the exact role of h‐BN encapsulation and the related excitonic properties in monolayer TMDs. Hexagonal boron nitride (h‐BN) is a key ingredient for various 2D van der Waals heterostructure devices, but the exact role of h‐BN encapsulation in relation to the internal defects of 2D semiconductors remains unclear. Here, it is reported that h‐BN encapsulation greatly removes the defect‐related gap states by stabilizing the chemisorbed oxygen molecules onto the defects of monolayer WS2 crystals. Electron energy loss spectroscopy (EELS) combined with theoretical analysis clearly confirms that the oxygen molecules are chemisorbed onto the defects of WS2 crystals and are fixated by h‐BN encapsulation, with excluding a possibility of oxygen molecules trapped in bubbles or wrinkles formed at the interface between WS2 and h‐BN. Optical spectroscopic studies show that h‐BN encapsulation prevents the desorption of oxygen molecules over various excitation and ambient conditions, resulting in a greatly lowered and stabilized free electron density in monolayer WS2 crystals. This suppresses the exciton annihilation processes by two orders of magnitude compared to that of bare WS2. Furthermore, the valley polarization becomes robust against the various excitation and ambient conditions in the h‐BN encapsulated WS2 crystals.

Layered Insulator Hexagonal Boron Nitride For Surface Passivation In Quantum Dot Solar Cell

2D layered insulator hexagonal boron nitride enabled surface passivation in dye sensitized solar cells

Synthesis and Characterization of Bi2S3 Quantum Dot-Sensitized TiO2 Nanorod Arrays Coated with ZnSe Passivation Layers

Construction of TiO2 NP@TiO2 NT Double-Layered Structural Photoanode to Enhance Photovoltaic Performance of CdSe/CdS Quantum Dots Sensitized Solar Cells

Two-Dimensional Functionalized Hexagonal Boron Nitride For Quantum Dot Photoelectrochemical Hydrogen Generation

Surface engineering of two-dimensional hexagonal boron-nitride for optoelectronic devices

Rational design of surface passivation for highly efficient quantum dot sensitized solar cell

Design of BN Porous Sheets with Richly Exposed (002) Plane Edges and Their Application As TiO2 Visible Light Sensitizer

Surface modification and interface engineering to enhance the performance of 2D-graphene/3D-silicon Schottky junction solar cells

Quantum Dot Interface-Mediated CsPbIBr 2 Film Growth and Passivation for Efficient Carbon-Based Solar Cells

Defect Passivation of 2D Semiconductors by Fixating Chemisorbed Oxygen Molecules via h‐BN Encapsulations

Doubling the Power Conversion Efficiency in CdS/CdSe Quantum Dot Sensitized Solar Cells with a ZnSe Passivation Layer

Photovoltaic performance of heteroatom-doped boron nitride quantum dots in quantum dot photovoltaic cells

Efficient Homogeneous and Isomorphic Blocking Layer – Skeleton Rutile TiO2 Electron Transfer Structure for Quantum Dot Sensitized Solar Cells

High-quality borophene quantum dot realization and their application in a photovoltaic device

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

Building high-efficiency CdS/CdSe-sensitized solar cells with a hierarchically branched double-layer architecture.

Interface Designed MoS2/GaAs Heterostructure Solar Cell with Sandwich Stacked Hexagonal Boron Nitride

Passivation Using Molecular Halides Increases Quantum Dot Solar Cell Performance.

Fabrication of heterostructure multilayer devices through the optimization of Bi-metal sulfides for high-performance quantum dot-sensitized solar cells