Patterned Silicon Substrates: A Common Platform for Room Temperature GaN and ZnO Polariton Lasers

J. Zuniga-Perez,E. Mallet,R. Hahe,M. J. Rashid,S. Bouchoule,C. Brimont,P. Disseix,J. Y. Duboz,G. Gomme,T. Guillet,O. Jamadi,X. Lafosse,M. Leroux,J. Leymarie,Feng Li,F. Reveret,F. Semond
DOI: https://doi.org/10.1063/1.4884120
IF: 4
2014-01-01
Applied Physics Letters
Abstract:A platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation, thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon, and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices.
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