Abstract:Applied Physics Letters, Volume 120, Issue 20, May 2022. Alloying of semiconductors is a good strategy to manipulate their electronic band structures, which can broaden the photoresponse range of the corresponding optoelectronic devices. In addition, building a Schottky diode and improving the crystal quality of the channel semiconductor can improve the photoresponse speed of the optoelectronic device. Here, we report the design and preparation of Bi1.85In0.15S3 nanowires by a facile chemical vapor transport method. The individual Bi1.85In0.15S3 nanowire photodetectors realize excellent photoresponse in a broadband range from solar-blind deep ultraviolet (266 nm) to near-infrared (830 nm), and the obtained maximum external photoresponsivity of 95.99 A/W and detectivity of about [math] Jones at 638 nm. Furthermore, the photodetectors also exhibit the ultrafast photoresponse speed with the rise time of 190 ns and the fall time of 180 ns, owing to the high crystal quality and the Schottky contacts between the Au electrodes and nanowires. In addition, the photoresponse of photodetectors is polarization angle sensitive in a broadband range from 266 to 808 nm, and the obtained maximum dichroic ratio is 3.54 at 808 nm, which results from the structural anisotropy of the Bi1.85In0.15S3 crystal. These performances are superior to the reported Bi2S3, In2S3, and other Bi or In sulfide nanowire photodetectors. The results render (BixIn1−x)2S3 photodetectors have significant application potentials in multifunctional optoelectronics and electronics.

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