Spin-polarized Quasiparticle Injection Devices Using Au/YBa2Cu3O7/LaAlO3/Nd0.7Sr0.3MnO3 Heterostructures

ZW Dong,R Ramesh,T Venkatesan,M Johnson,ZY Chen,SP Pai,V Talyansky,RP Sharma,R Shreekala,CJ Lobb,RL Greene
DOI: https://doi.org/10.1063/1.120014
IF: 4
1997-01-01
Applied Physics Letters
Abstract:Oxide heterostructures were used for studies of quasiparticle injection effects in high-Tc superconducting thin films. The effect of injection of spin polarized quasiparticles from a ferromagnetic gate layer was compared to that of unpolarized quasiparticles from a nonmagnetic metallic gate. Transport measurements of the superconducting layer showed strong suppression in the supercurrent by the injection of spin-polarized quasiparticles, and a current gain of as large as five was attained. This is 10 to 30 times larger than the gain of unpolarized injection devices. Such large effects could be useful in a variety of active high-Tc superconductor/colossal magnetoresistance heterostructure based devices.
What problem does this paper attempt to address?