Five-band Bias-Selectable Integrated Quantum Well Detector in an N-P-n Architecture

G. Ariyawansa,Y. Aytac,A. G. U. Perera,S. G. Matsik,M. Buchanan,Z. R. Wasilewski,H. C. Liu

DOI: https://doi.org/10.1063/1.3524236

IF: 4

2010-01-01

Applied Physics Letters

Abstract:A detector with five bands covering visible to long-wave infrared is demonstrated using a GaAs-based n-p-n-architecture. The major elements are two back-to-back connected p-i-n photodiodes with InGaAs/GaAs and GaAs/AlGaAs-based quantum wells integrated within the n-regions. At 80 K, a preliminary detector shows two combinations of bands, each responding in three bands, covering the 0.6–0.8, 3–4, and 4–8 μm ranges and the 0.8–0.9, 0.9–1.0, and 9–13 μm ranges. A good selection of these two combinations based on the bias voltage polarity is observed. A similar four-band detector without any cross-talk between the bands is proposed using In0.53Ga0.47As/InP material system.