Intrinsic and Quantitative Effects of In-Plane Strain on Ferroelectric Properties of Mn-doped BiFeO3 Epitaxial Films by in Situ Inducing Strain in Substrates

M. M. Yang,X. Q. Zhao,J. Wang,Q. X. Zhu,J. X. Zhang,X. M. Li,H. S. Luo,X. G. Li,R. K. Zheng
DOI: https://doi.org/10.1063/1.4863825
IF: 4
2014-01-01
Applied Physics Letters
Abstract:We report in situ manipulation of the in-plane strain εxx(BFMO) and coercive field EC(BFMO) of BiFe0.95Mn0.05O3 (BFMO) films epitaxially grown on La0.7Sr0.3MnO3 film buffered 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates. PMN-PT poling-induced strain is effectively transferred to BiFe0.95Mn0.05O3 films and enhances εxx(BFMO) and EC(BFMO), with a gauge factor (ΔEC(BFMO)/EC(BFMO))/(δεxx) ∼−25 and −326 for the BFMO(001) and BFMO(111) films, respectively. Based on the strain dependence of EC(BFMO), we established a quantitative relationship between EC(BFMO) and εxx(BFMO). Using ferroelastic strain of PMN-PT, we achieved reversible and non-volatile modulation of strain and EC(BFMO) of BFMO films, providing an approach for non-volatile and reversible turning of strain and physical properties of ferroelectric films.
What problem does this paper attempt to address?