Highly Enhanced Ultraviolet Photosensitivity and Recovery Speed in Electrospun Ni-Doped Sno2 Nanobelts

Siya Huang,Kohei Matsubara,Jing Cheng,Heping Li,Wei Pan
DOI: https://doi.org/10.1063/1.4824026
IF: 4
2013-01-01
Applied Physics Letters
Abstract:Precisely controlled Ni-doped SnO2 (NSO) nanobelt arrays are synthesized and assembled via electrospinning. In comparison to pristine SnO2 nanobelts, enhanced photosensitivity (∼103) as well as recovery speed (∼1 s) is obtained in NSO nanobelts. The mechanism is clarified by the compensation effect of acceptor impurity Ni, which not only promotes the oxygen-surface interaction but also introduces trapping centers in SnO2 matrix. The reduced grain size (∼4 nm) along with increased depletion layer thickness also benefits the photosensitivity of NSO nanobelts. These improved photoresponse properties make the NSO nanobelt a promising candidate for high-performance ultraviolet detectors.
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