Abstract:Compared with traditional semiconductor materials, graphene has unparalleled advantages on mobility, thermal conductivity, mechanical strength and so on. Thus it was considered as a promising candidate material for the future semiconductor industry. However, since its band structure is gapless, band gap engineering has become a significant task for scientists. My dissertation focuses on chemical and physical modification methods that could pave the way to applications of graphene based devices and reveal a number of interesting phenomena. The critical roadblock for graphene electronics is the absence of a band gap. We first focus on chemical functionalization of graphene as a route to band gap engineering. This is first achieved via grafting nitrophenyl groups onto single layer graphene sheets. The functionalized graphene samples behave like semiconductors. Substrate supported and suspended samples demonstrate transport gaps as large as ~0.1eV and ~1eV, respectively. Secondly, we developed a different chemical functionalization approach based on organometallic chemistry. Apart from behaving like semiconductors, functionalized samples also retains the high mobility of the pristine state. The second part of the thesis focuses on physical modifications of graphene a. Suspended graphene-based switch was developed using a special pulsing breakdown technique. Voltage pulses of 2.5V~4V and 8V can turn a switch device to ON (high conductance) state and OFF (low conductance) state, respectively. We provide experimental evidence that these behaviors arise from motions of atomic-scale carbon chains and reformation of chemical bonds. Finally, strain engineering is another approach for modifying transport properties of graphene. We proposed and developed novel nano-electromechanical system (NEMS)-like devices that allows in situ modulation of strain on suspended graphene flakes, which in turn induces interesting changes in both transport and morphological properties of graphene. In summary, this dissertation presents our studies on chemical and physical modification approaches of graphene samples, and related novel phenomena that emerge amid these devices, with implications on next generation electronic devices.

Tailoring Electronic Properties of Graphene by Π–π Stacking with Aromatic Molecules

Linear Tuning of Charge Carriers in Graphene by Organic Molecules and Charge-Transfer Complexes

Atomic-Scale Tailoring of Chemisorbed Atomic Oxygen on Epitaxial Graphene for Graphene-Based Electronic Devices

Chemical Modification of Graphene and Its Applications

Tuning the properties of graphene using a reversible gas-phase reaction

Tailoring the Electronic Structure and Properties of Graphdiyne by Cyano Groups

Mechanical and Electrical Properties of Modified Graphene Devices

Recent Progress in Preparation and Band-gap Modulation of Graphene

Graphene: Preparation, tailoring, and modification

Tailoring The Polarity Of Charge Carriers In Graphene-Porphine-Graphene Molecular Junctions Through Linkage Motifs

Stacking control in graphene-based materials: a promising way for fascinating physical properties

A First-Principles Study of the Electrically Tunable Band Gap in Few-Layer Penta-Graphene

Tailoring Atomic Structure to Control the Electronic Transport in Zigzag Graphene Nanoribbon

The Effects of Graphene Stacking on the Performance of Methane Sensor: A First-Principles Study on the Adsorption, Band Gap and Doping of Graphene

Quantum Interference-Controlled Conductance Enhancement in Stacked Graphene-like Dimers.

Properties and Applications of Graphene Stack

Research Progress of Intramolecular π‐Stacked Small Molecules for Device Applications

Tailoring quantum transport efficiency in molecular junctions via doping of graphene electrodes

Tuning Electron Transport in Graphene-Based Field-Effect Devices Using Block Co-Polymers.

Tailoring the Energy Landscape of Graphene Nanostructures on Graphene and Manipulating Them Using Tilt Grain Boundaries

Tailoring Li Adsorption On Graphene