Effect of Co Doping on Unipolar Resistance Switching in Pt/Co:Zno/Pt Structures

Hongtao Xu,Deok Hyeon Kim,Zhao Xiahou,Ying Li,Mingyuan Zhu,Bowha Lee,Chunli Liu
DOI: https://doi.org/10.1016/j.jallcom.2015.11.018
IF: 6.2
2016-01-01
Journal of Alloys and Compounds
Abstract:Co-doped ZnO thin films were deposited on Pt/TiO2/SiO2/Si substrates by a spin-coating method. Co concentrations of 0, 1%, 3%, and 5% were used to investigate the effects of doping on the resistance switching (RS) behavior of these Pt/Co-doped ZnO/Pt structures. When compared with the other samples, the 1% Co-doped ZnO showed improved RS performance with regard to both the forming process and the stability of the set voltage. X-ray photoelectron spectroscopy analysis indicated that there were more oxygen vacancies in the 1% Co-doped ZnO, which promoted a lower forming voltage and the possibility of forming-free switching, and led to quite a narrow set voltage distribution. These results indicate that appropriate Co doping can be applied to improve the RS characteristics of ZnO thin films to provide stable, low-power-consumption memory devices.
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