Abstract:After carefully theoretical research, as for the concepts of P- and N- type semiconductors, it is found that there are contradictions between inorganic and polymer semiconductors. Then through the basic concepts of hole and electron, it can be derived that all the polymer semiconductors should have ambipolar transporting characteristics, which has been proved by the subsequently experimental data through the impedance spectroscopy from the common materials. Such general ambipolar transporting properties of polymers are firstly systematically investigated in diode structure, which is closer to their intrinsic properties. The hole can be seen as "electron group of hole", and it is difficult to be quenched than one electron, which can then help to get the common reported data that the number of hole transporting polymers are more popular than that of electron transport. Moreover, the experimental mobility curves mostly show the negative slope, which seems to be opposite to the basic fact that the electric field will accelerate the directional movement of carrier. The concept of carrier segment is then proposed for such negative slope, which is one conjugation projection system. In one carrier segment, the carrier can move freely as in one molecule, which can be accelerated by external electric field. From one carrier segment to another carrier segment, the kinetic energy of carrier could be relaxed by the vibration of carrier segment dipole. If the energy loss from vibration relaxation of carrier segment is larger than the energy increment from the external electric field, the carrier mobility curve will show the whole negative characteristic. Which effect can have the main influence is determined by the molecular structure of polymers. At last, the vibration model of the polymers has been investigated through the IR spectroscopy and the calculation methods. It is showed that the vibration models of P3HT have some special characteristics, which are corresponding to the fact that its slopes of hole and electron mobility curves are contrary to each other.

Research of carrier mobility in NPD through negative differential susceptance spectra

Study of carrier mobility of N,N′-diphenyl-N,N′bis(1,1′- biphenyl)-4,4′-diamine (NPB) by transmission line model of impedance spectroscopy

Application of Capacitance Spectrum and the Imaginary Part of Impedance Spectrum to Study Carrier Dynamics of N,N′-diphenyl-N,N′bis(1,1′-biphenyl)-4,4′-diamine

Impedance Spectroscopy Study on Transport Properties of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine

Transient Space-Charge-Perturbed Currents Of N,N '-Diphenyl-N,N '-Bis(1-Naphthyl)-1,1 '-Biphenyl-4,4 '-Diamine And N,N '-Diphenyl-N,N '-Bis(3-Methylphenyl)-1,1 '-Biphenyl-4,4 '-Diamine In Diode Structures

Mobility Measurement With Organic Optoelectronic Couplers

Ambipolar transport of polymer semiconductors in diodes and carrier segment vibration relaxation to the negative slope phenomena

New Method of Mobility Measurement for Organic Semiconductors by Optoelectronic Coupling

Experimental and Theoretical Study of the Charge Transport Property of 4,4′- N , N ′-Dicarbazole-biphenyl

Direct observation of the electronic structure and many-body interactions of low-mobility carriers in perylene diimide derivative

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

Thickness Dependence Of Carrier Mobility And The Interface Trap Free Energy Investigated By Impedance Spectroscopy In Organic Semiconductors

Generalized Transport-Band Field-Effect Mobility in Disordered Organic and Inorganic Semiconductors

Experimental Observation of Ultrahigh Mobility Anisotropy of Organic Semiconductors in the Two-Dimensional Limit

Carrier Mobilities in Organic Electron Transport Materials Determined from Space Charge Limited Current

Transition Metal Oxide As Anode Interface Buffer for Impedance Spectroscopy

Study of Carrier-Mobility of Organic Thin Film by Dark-Injection Time-Of-Flight and Electric-Field-Induced Optical Second-Harmonic Generation Measurements

Simultaneous Measurement of Carrier Density and Mobility of Organic Semiconductors Using Capacitance Techniques

Electric Field Inside A Hole-Only Device And Insights Into Space-Charge-Limited Current Measurement For Organic Semiconductors

Theoretical comparative studies of charge mobilities for molecular materials: Pet versus bnpery

Determination of Carrier Mobility of Semiconductor Layer in Organic Metal-Insulator-semiconductor Diodes by Displacement Current and Electric-Field-induced Optical Second-Harmonic Generation Measurements