Valence State Change And Defect Centers Induced By Infrared Femtosecond Laser In Yb:Yag Crystals

xinshun wang,yang liu,panjuan zhao,zhongyi guo,yan li,shiliang qu
DOI: https://doi.org/10.1063/1.4918550
IF: 2.877
2015-01-01
Journal of Applied Physics
Abstract:The broad band upconversion luminescence in Yb3+: YAG crystal has been observed in experiments under the irradiation of focused infrared femtosecond laser. The dependence of the fluorescence intensity on the pump power shows that the upconversion luminescence is due to simultaneous two-photon absorption process, which indicates that the broad emission bands at 365 and 463 nm could be assigned to the 5d -> 4f transitions of Yb2+ ions and the one at 692 nm could be attributed to the electron-hole recombination process on (Yb2+-F+) centers. The absorption spectra of the Yb:YAG crystal samples before and after femtosecond laser irradiation, and after further annealing reveal that permanent valence state change of Yb ions from Yb3+ to Yb2+ and (Yb2+-F+) centers have been induced by infrared femtosecond laser irradiation in Yb3+: YAG crystal. (C) 2015 AIP Publishing LLC.
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