Enhanced Sensitivity in Magnetoelectric Current-Sensing Devices with Frequency Up-Conversion Mechanism by Modulating the Magnetostrictive Strain

Jitao Zhang,Ping Li,Yumei Wen,Wei He,Jin Yang,Aichao Yang,Caijiang Lu,Wenli Li
DOI: https://doi.org/10.1063/1.4862081
IF: 2.877
2014-01-01
Journal of Applied Physics
Abstract:A frequency-tunable current sensor consisting of Terfenol-D/PZT/Terfenol-D magnetoelectric (ME) laminate and Fe73.5Cu1Nb3Si13.5B9 nanocrystalline alloy has been developed. Almost all ME current-sensing devices have higher outputs at resonance conditions, but this advantage is useful only for narrow bandwidth. For the purpose of broadband current sensing, a frequency up-conversion mechanism is introduced by means of nonlinearity of the field-dependence magnetostriction λ(H). Current sensitivity enhancement is realized by modulating the low-frequency dynamic magnetostrictive strain to its resonance conditions. This solution provides the possibility to achieve resonance-enhanced sensitivity at the power-line frequency of 50 Hz, and the capability to immune the noise floor. Experimental results show that the modulated sensitivity is increased from 48.6 mV/A to 178.4 mV/A at 50 Hz, and a small current step change of 3 mA can be clearly distinguished by amplitude or phase of the output signals. These results provide possibilities to accurately detect weak currents in the noise ambient at low frequencies.
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