Abstract:Tuning the transport properties of graphene-based devices to achieve better performance is a fascinating but tough challenge. To overcome this challenge, we created one-dimensional nanostructures that resemble chains by symmetrically doping B and N atoms at different positions in armchair graphene nanoribbons (AGNRs) of different widths saturated by H/O atoms. Their transport properties, including band structure, the spatial distribution of eigenstates, the projected density of states (PDOS), and current-voltage (I-V) curve, have been investigated depending on the non-equilibrium Green's function (NEGF) and Density functional theory (DFT) methods. Based on the calculations, the seven-atom-wide armchair graphene nanoribbons (7-AGNRs) have a distinctive negative differential resistance (NDR) effect with a maximum peak-to-valley ratio (PVR) of 3.34 × 10 6 . We speculate that the NDR effect depends on the strength of the coupling between the band structures of the electrodes within the transmission window, and that the degree of overlap between the P z orbitals of the doped atoms and their delocalized big π orbitals is also relevant. Compared to the existing diodes with fully hydrogenated or fluorinated edges, diodes with H/O co-saturated edges have lower start-up voltages and higher currents in the doped case, as well as rectification ratio of up to 4.48 × 10 6 in the range of [1.1 V, 1.4 V]. Our results have great promise for applications in digital and storage devices as well as in novel oscillators and nanoelectronics.

Semiconductor To Metal Transition By Tuning The Location Of N-2(Aa) In Armchair Graphene Nanoribbons

Rectification Induced In N-2(Aa)-Doped Armchair Graphene Nanoribbon Device

Fermi-Level Engineering of Nitrogen Core-Doped Armchair Graphene Nanoribbons

Electronic Structures and Transport Properties of Armchair Graphene Nanoribbons by Ordered Doping

Semiconductor–metal and metal–semiconductor transitions in twisting graphene nanoribbons

Strong Current-Polarization and Negative Differential Resistance in FeN3 -Embedded Armchair Graphene Nanoribbons

Ordered Semiconducting Nitrogen-Graphene Alloys

Half-filled Energy Bands Induced Negative Differential Resistance in Nitrogen-Doped Graphene.

A first-principles study on the electronic transport properties of symmetric B/N co-doped armchair graphene nanoribbons with H/O co-saturation

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.

Modulating the electronic properties of graphdiyne nanoribbons

Electronic transport through zigzag/armchair graphene nanoribbon heterojunctions.

Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

A metal-semiconductor transition in helical graphene nanoribbon

Uniform and Perfectly Linear Current-Voltage Characteristics of Nitrogen-Doped Armchair Graphene Nanoribbons for Nanowires.

Structural and Electronic Properties of Substitutionally Doped Armchair Silicene Nanoribbons

Metal-semiconductor transition and Fermi velocity renormalization in metallic carbon nanotubes

Decoration of graphene nanoribbons by $5d$ transition-metal elements

Diversified Phenomena in Metal- and Transition-Metal-Adsorbed Graphene Nanoribbons

First-principles study of electric field effect and spin-polarization transport properties of zigzag α-2 graphyne nanoribbons

The Absorption of Transition Metal Atoms in G-C6n6 Nanoribbon Induces Narrow Band Gap Semiconductor with Magnetism