Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Anisotropic Charged Impurity-Limited Carrier Mobility In Monolayer Phosphorene

Phonon-limited carrier mobility in monolayer Black Phosphorous

Temperature-dependent Anisotropic Charge-Carrier Mobility Limited by Ionized Impurity Scattering in Thin-Layer Black Phosphorus

Strain engineering the charged-impurity-limited carrier mobility in phosphorene

Mobility Anisotropy in Monolayer Black Phosphorus Due to Scattering by Charged Impurities

A large enhancement of carrier mobility in phosphorene by introducing hexagonal boron nitride substrate

Anisotropic Carrier Mobility in Two-Dimensional Materials with Tilted Dirac Cones: Theory and Application.

Strong Thermal Transport Anisotropy and Strain Modulation in Single-Layer Phosphorene

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Mobility Anisotropy of Two-Dimensional Semiconductors

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Phosphorene: A New 2D Material with High Carrier Mobility

Direction Dependent Thermal Conductivity of Monolayer Phosphorene: Parameterization of Stillinger-Weber Potential and Molecular Dynamics Study

Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study

Anisotropic Charge Transfer Mobility Properties of Systems with Large Conjugation Core and Peripheral Phenyl Rings

Thermoelectric Properties of Phosphorene at the Nanoscale

Charged Vacancy Defects in Black Phosphorus Monolayer Phosphorene

Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes

Mobility Anisotropy in Black Phosphorus MOSFETs with HfO2 Gate Dielectrics

Long-range electrostatic contribution to electron-phonon couplings and mobilities of two-dimensional and bulk materials

Unified Description of Charge-Carrier Mobilities in Disordered Organic Semiconductors Based on Both Arrhenius and Non-Arrhenius Temperature Dependence