BiVO 4 semiconductor sensitized solar cells

Yi Li,Jun Zhu,Hui Chu,Junfeng Wei,Feng Liu,Mei Lv,Junwang Tang,Bing Zhang,Jianxi Yao,Zhipeng Huo,Linhua Hu,Songyuan Dai
DOI: https://doi.org/10.1007/s11426-015-5348-3
2015-01-01
Abstract:Semiconductor sensitized solar cells (SSSCs) are promising candidates for the third generation of cost-effective photovoltaic solar cells and it is important to develop a group of robust, environment friendly and visible-light-responsive semiconductor sensitizers. In this paper, we first synthesized bismuth vanadate (BiVO 4 ) quantum dots by employing facile successive ionic layer adsorption and reaction (SILAR) deposition technique, which we then used as a sensitizer for solar energy conversion. The preliminary optimised oxide SSSC showed an efficiency of 0.36%, nearly 2 orders of magnitude enhancement compared with bare TiO 2 , due to the narrow bandgap absorption of BiVO 4 quantum dots and intimate contact with the oxide substrate. This result not only demonstrates a simple method to prepare BiVO 4 quantum dots based solar cell, but also provides important insights into the low bandgap oxide SSSCs.
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