Abstract:The structural optimization and energetics studies of SiC graphitic-like structures have been investigated theoretically in the context of formations of stable graphitic-like layer structures, single- and multi-walled nanotubes using the DFT-based Vienna ab-inito simulation package. The bonding nature of atoms in the optimized structures has been examined using a local analysis technique based on a self-consistent and environment-dependent semi-empirical Hamiltonian. Results of our studies reveal that stabilized SiC graphitic-like layer structures possess the sp2 bonding nature, different from the sp3 bonding nature in bulk SiC. Such flexibility in bonding configurations between Si and C atoms holds the possibility for a wide range of stable SiC-based structures, similar to those for carbon-based structures. In the case of SiC-based nanotubes, we have calculated quantities such as the strain energy, the degree of buckle in the cylindrical shell, and bond charges between Si and C atoms, to obtain an understanding of the optimized structures. The optimized interlayer spacing of SiC graphitic-like multilayer sheets has been found to depend on the ordering of atoms in different layers of the SiC graphitic-like structure (0.37 nm for the Si-C sequence of bilayer arrangement versus 0.48 nm for either the Si-Si or the C-C sequence of bilayer arrangement). These observations may be attributed to the Coulomb interactions due to the charge redistribution among Si and C atoms. On the other hand, the existence of two different ranges of interlayer separation in SiC double-walled nanotubes (0.38 nm for zigzag and 0.48 nm for armchair) is found to be related to whether the dominant interlayer neighbors are of the Si-C type or the Si-Si and C-C types.

An Ab Initio Study of Cluster-Assembled Hydrogenated Silicon Nanotubes

An ab initio design of cluster-assembled silicon nanotubes

From Pure C(60) to Silicon Carbon Fullerene-Based Nanotube: an Ab Initio Study.

Geometric and Electronic Structures of Hydrogen-Stabilized Silicon Nitride Nanosheets and Nanotubes

Design of Cluster Structure Units with Large Surface Areas for High-Capacity Hydrogen Storage: in the Case of Si12C12H24

Descent of morphisms of overconvergent F-crystals

Size- and Surface-Dependent Electronic Structures of Crystalline SiC Nanotubes

Bonding Nature, Structural Optimization, and Energetics studies of SiC Graphitic-Like layer Structures and Single/Double Walled Nanotubes

Silicon and III-V compound nanotubes: structural and electronic properties

First-Principles Study of Hydrogen-Passivated Single-Crystalline Silicon Nanotubes: Electronic and Optical Properties

Fluorination Effects on the Structural Stability and Electronic Properties of sp3 Type Silicon Nanotubes

Hydrothermal Synthesis and Characterization of Silicon Nanotubes

Electronic Properties Of Single-Walled Silicon Nanotubes Compared To Carbon Nanotubes

A Hybrid Density Functional Study of Armchair Si and Ge Nanotubes

Transition metal encapsulated hydrogenated silicon nanotubes: Silicon-based half-metal

Band structure of hydrogenated Si nanosheets and nanotubes

Bonding Modes and Electronic Properties of Single-Crystalline Silicon Nanotubes

First Principle Study on the Structure and Electronic Property of Si Nanotubes

Essential Electronic Properties of Silicon Nanotubes

Geometry and electronic stability of tungsten encapsulated silicon nanotubes.

Prediction of Single-Wall Boron Nanotube Structures and the Effects of Hydrogenation